Droplet Epitaxy and Physical Characterization of InN Quantum Dots

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Droplet Epitaxy and Physical Characterization of InN Quantum Dots

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Droplet Epitaxy and Physical Characterization of InN Quantum Dots
- Chinese Journal of Luminescence Vol. 40, Issue 2, Pages: 171-176(2019)
- 作者机构：
  
  1. 长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
  2. 海南师范大学物理与电子工程学院, 海南海口 571158
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194002.0171
  CLC： O472+.1;O472+.3
- Received：17 April 2018，
  
  Revised：28 September 2018，
  
  Published Online：20 August 2018，
  
  Published：05 February 2019
- 稿件说明：
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陈启明, 晏长岭, 曲轶. InN量子点的液滴外延及物性表征[J]. 发光学报, 2019,40(2): 171-176

CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176
陈启明, 晏长岭, 曲轶. InN量子点的液滴外延及物性表征[J]. 发光学报, 2019,40(2): 171-176 DOI： 10.3788/fgxb20194002.0171.

CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176 DOI： 10.3788/fgxb20194002.0171.

摘要

由于1.55 m波段广泛应用于通信领域，为了探索不同生长温度对InN量子点的形貌影响，并且实现自组装InN量子点在1.55 m通信波段的发光，对InN量子点的液滴外延及物性进行了相关研究。首先利用射频等离子体辅助分子束外延（PA-MBE）技术在GaN模板上，采用液滴外延方法在3种温度下生长了InN量子点结构。生长过程中靠反射高能电子衍射（RHEED）对样品进行原位监控。原子力显微镜（AFM）表征结果表明随着生长温度升高，量子点尺寸变大，密度减小。在生长温度350℃和400℃下，观测到了量子点；当温度高于450℃时，未观测到InN量子点。当生长温度为400℃时，量子点形貌最好，密度为610

8

/cm

2

，对400℃下生长的InN量子点进行了变温PL测试，成功得到InN量子点在1.55 m波段附近的光致发光，并且随着测试温度的升高，量子点的发光峰位发生了先红移后蓝移最后又红移的S型曲线变化，这种量子点有望在未来应用于量子通信领域。

Abstract

Because the 1.55 m band is widely used in the communication field

in order to explore the influence of different growth temperatures on the morphology of InN quantum dots(QDs)

and to realize the 1.55 m luminescence of self-assembled InN QDs

the droplet epitaxy and physical properties of InN QDs were investigated. Firstly

the InN QDs structure was grown at three different temperatures by droplet epitaxy on a GaN template using radio frequency plasma-assisted molecular beam epitaxy(PA-MBE) technique. During the growth process

the sample was

in-situ

detected by RHEED. The AFM results show that the size of quantum dots increases and the density decreases with the growth temperature increasing. The InN QDs were observed at the growth temperatures of 350℃ and 400℃. No InN quantum dots were observed at temperature 450℃. When the growth temperature is 400℃

the QDs have the best morphology and the QDs density is 610

8

/cm

2

. The temperature dependent PL was measured on the sample grown at 400℃

and the 1.55 m emission from the InN QDs is successfully obtained. With the increase of measured temperature

the emission peaks of quantum dots have a S-curve change:from a red shift to a blue shift and last a red shift. These InN QDs are expected to be used in the quantum communication field in the future.

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references

KLIMOV V I,MIKHAILOVSKY A A,XU S,et al.. Optical gain and stimulated emission in nanocrystal quantum dots[J]. Science, 2000,290(5490):314-317.

PETRYAYEVA E,ALGAR W A,MEDINTZ I L. Quantum dots in bioanalysis:a review of applications across various platforms for fluorescence spectroscopy and imaging[J]. Appl. Spectrosc., 2013,67(3):215-252.

VALIZADEH A,MIKAEILI H,SAMIEI M,et al.. Quantum dots:synthesis,bioapplications,and toxicity[J]. Nanoscale Res. Lett., 2012,7(1):480-1-14.

KIM T H,CHO K S,LEE E K,et al.. Full-colour quantum dot displays fabricated by transfer printing[J]. Nat. Photon., 2011,5(3):176-182.

JI L W,SU Y K,CHANG S J,et al.. InGaN quantum dot photodetectors[J]. Solid-State Electron., 2003,47(10):1753-1756.

SHETTY A,KUMAR M,ROUL B,et al.. InN quantum dot based Infrared photodetectors[J]. J. Nanosci. Nanotechnol., 2016,16(1):709-714.

MEENA J S,SZE S M,CHAND U,et al.. Overview of emerging nonvolatile memory technologies[J]. Nanoscale Res. Lett., 2014,9(1):526-1-33.

WU J,WALUKIEWICZ W,YU K M,et al.. Unusual properties of the fundamental band gap of InN[J]. Appl. Phys. Lett., 2002,80(21):3967-1-14.

KLOCHIKHINA A,DAVYDOV V Y,EMTSEV V V,et al.. Acceptor states in the photoluminescence spectra of n-InN[J]. Phys. Rev. B, 2005,71(19):195207-1-16.

BELLOTTI E,DOSHI B K,BRENNAN K F,et al.. Ensemble Monte Carlo study of electron transport in wurtzite InN[J]. J. Appl. Phys., 1999,85(2):916-923.

MOHAMMAD S N,MORKO H. Progress and prospects of group-Ⅲ nitride semiconductors[J]. Prog. Quantum Electron., 1996,20(5-6):361-525.

O'LEARY S K,FOUTZ B E,SHUR M S,et al.. Electron transport in wurtzite indium nitride[J]. J. Appl. Phys., 1998,83(2):826-829.

KUMAR M,ROUL B,BHAT T N,et al.. Droplet epitaxy of InN quantum dots on Si(111) by RF plasma-assisted molecular beam epitaxy[J]. Adv. Sci. Lett., 2010,3(4):379-384.

KAWASAKI K,YAMAZAKI D,KINOSHITA A,et al.. GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors[J]. Appl. Phys. Lett., 2001,79(14):2243-2245.

HU C W,BELL A,PONCE F A,et al.. Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism[J]. Appl. Phys. Lett., 2002,81(17):3236-3238.

MARUYAMA T,OTSUBO H,KONDO T,et al.. Fabrication of GaN dot structure by droplet epitaxy using NH3[J]. J. Cryst. Growth, 2007,301-302:486-489.

KUMAR M,BHAT T N,RAJPALKE M K,et al.. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy[J]. Bull. Mater. Sci., 2010,33(3):221-226.

CHEN H J Y,YANG D L,HUANG T W,et al.. Formation and temperature effect of InN nanodots by PA-MBE via droplet epitaxy technique[J]. Nanoscale Res. Lett., 2016,11:241-1-9.

STINAFF E A,SCHEIBNER M,BRACKER A S,et al.. Optical signatures of coupled quantum dots[J]. Science, 2006,311(5761):636-639.

LEE J H,WANG Z M,ABUWAAR Z Y,et al.. Evolution between self-assembled single and double ring-like nanostructures[J]. Nanotechnology, 2006,17(15):3973-3976.

WANG Z M,LEE J H,LIANG B L,et al.. Localized formation of InAs quantum dots on shallow-patterned GaAs(100)[J]. Appl. Phys. Lett., 2006,88(23):233102-1-3.

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