CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176
CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176 DOI: 10.3788/fgxb20194002.0171.
Droplet Epitaxy and Physical Characterization of InN Quantum Dots
Because the 1.55 m band is widely used in the communication field
in order to explore the influence of different growth temperatures on the morphology of InN quantum dots(QDs)
and to realize the 1.55 m luminescence of self-assembled InN QDs
the droplet epitaxy and physical properties of InN QDs were investigated. Firstly
the InN QDs structure was grown at three different temperatures by droplet epitaxy on a GaN template using radio frequency plasma-assisted molecular beam epitaxy(PA-MBE) technique. During the growth process
the sample was
in-situ
detected by RHEED. The AFM results show that the size of quantum dots increases and the density decreases with the growth temperature increasing. The InN QDs were observed at the growth temperatures of 350℃ and 400℃. No InN quantum dots were observed at temperature 450℃. When the growth temperature is 400℃
the QDs have the best morphology and the QDs density is 610
8
/cm
2
. The temperature dependent PL was measured on the sample grown at 400℃
and the 1.55 m emission from the InN QDs is successfully obtained. With the increase of measured temperature
the emission peaks of quantum dots have a S-curve change:from a red shift to a blue shift and last a red shift. These InN QDs are expected to be used in the quantum communication field in the future.
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