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华南理工大学 材料科学与工程学院, 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 广东 广州 510640
Received:01 May 2018,
Revised:20 June 2018,
Published Online:27 June 2018,
Published:05 February 2019
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张旭, 刘贤哲, 袁炜健等. 退火温度对旋涂法制备SnO<sub>2</sub>薄膜性能的影响[J]. 发光学报, 2019,40(2): 164-170
ZHANG Xu, LIU Xian-zhe, YUAN Wei-jian etc. Effect of Annealing Temperature on Properties of SnO<sub>2</sub> Thin Films Prepared by Spin Coating[J]. Chinese Journal of Luminescence, 2019,40(2): 164-170
张旭, 刘贤哲, 袁炜健等. 退火温度对旋涂法制备SnO<sub>2</sub>薄膜性能的影响[J]. 发光学报, 2019,40(2): 164-170 DOI: 10.3788/fgxb20194002.0164.
ZHANG Xu, LIU Xian-zhe, YUAN Wei-jian etc. Effect of Annealing Temperature on Properties of SnO<sub>2</sub> Thin Films Prepared by Spin Coating[J]. Chinese Journal of Luminescence, 2019,40(2): 164-170 DOI: 10.3788/fgxb20194002.0164.
采用旋涂法在玻璃基底上制备SnO
2
薄膜,通过原子力显微镜(AFM)、X射线反射(XRR)、傅氏转换红外线光谱仪(FT-IR)、X射线衍射(XRD)、紫外-可见分光光度计、四探针、开尔文探针系统对薄膜的表面形貌、结构及光学特性、电学特性进行分析,探讨了退火温度对薄膜质量的影响及作用机制。研究发现:随着退火温度升高,薄膜厚度和有机成分杂质减小,薄膜密度递增,但薄膜表面粗糙度有所上升;当退火温度升高至500℃时,薄膜结构由非晶转变为结晶,其主要晶面为氧化锡的(110)、(101)和(211)晶面。旋涂法制备的氧化锡薄膜在可见光区域的平均透光率在90%以上,随着退火温度上升,薄膜在400~800 nm波段的透光率先减小后增大,薄膜的带隙宽度分别为3.840 eV(沉积态薄膜)、3.792 eV(100℃)、3.690 eV(300℃)和3.768 eV(500℃);薄膜的电导率也随着退火温度升高而增加,在500℃时电导率高达916 S/m;薄膜的功函数先增大后减小,分别为(4.610.005)eV(沉积态薄膜)、(4.640.005)eV(100℃)、(4.820.025)eV(300℃)、(4.780.065)eV(500℃)。
Tin oxide thin films were prepared on glass substrates by spin coating
then
films were annealed at different temperatures in the air. The morphology
structural characteristics
optical properties and electrical properties of the films were characterized by atomic force microscope(AFM)
X-ray reflection system(XRR)
FT-IR
X-ray diffraction(XRD)
UV-visible spectrophotometer
four-probe tester and Kelvin Probe
and the effect of annealing temperature on the quality of film and its mechanism have been studied. The results show that
as the annealing temperature increases
the thickness of the films decreases
the content of organic in films reduces
and the density of the films increases
however
the surface roughness of the film increases. When the annealing temperature is 500℃
SnO
2
crystals appear on the film
the (101)
(110)
(211) crystal phases appear. Transmittance of samples in the visible light region is above 90%. As the annealing temperature increases
the transmittance of the film in 400-800 nm band decreases first and then increases
and bandgap widths of the films are 3.840 eV(as-deposited)
3.792 eV(100℃)
3.690 eV(300℃)
and 3.768 eV(500℃); the conductivity of the film increases
and the conductivity reaches 916 S/m at 500℃; the work function of the film increases and then decreases
and work function of the films is (4.610.005) eV(as-deposited)
(4.640.005) eV(100℃)
(4.820.025) eV(300℃)
(4.780.065) eV(500℃).
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