LIU Huan, BI Wen-tao, GAO Feng-qiang etc. Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA<sub>0.6</sub>Cs<sub>0.4</sub>PbBr<sub>3</sub>[J]. Chinese Journal of Luminescence, 2019,40(1): 89-96
LIU Huan, BI Wen-tao, GAO Feng-qiang etc. Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA<sub>0.6</sub>Cs<sub>0.4</sub>PbBr<sub>3</sub>[J]. Chinese Journal of Luminescence, 2019,40(1): 89-96 DOI: 10.3788/fgxb20194001.0089.
Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA0.6Cs0.4PbBr3
In order to analyze the luminescent characteristics and mechanism of perovskite materials
a stable perovskite light emitting diode was prepared. The transient current and transient electroluminescence of the device driven by electric pulsed are investigated. At a constant current density of 10 mAcm
-2
the luminance attenuated from the maximum to half in a duration of more than 30 min
which ensure the accuracy of the transient test. In the 0.1~20 ms pulse width
the luminous efficiency of the device increases with time
and there is a reverse current after power turn-off. In the pulse amplitude test
the brightness of low voltage easily reaches its saturation. In the offset voltage test
the intensity of electroluminescence at high offset voltage is lower than that at low offset voltage. Analyzing the transient test results
we can conclude that ion migration (MA
+
Br
-
) leads to the bending of energy band in the interface of the perovskite layer
which weakens the carrier injection. Meanwhile
the exciton dissociation is suppressed
leading an increase in the electroluminescence efficiency.
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references
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