Morphology and Optical Properties of GaN Micro-pyramid Structure

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Morphology and Optical Properties of GaN Micro-pyramid Structure

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Morphology and Optical Properties of GaN Micro-pyramid Structure
- Chinese Journal of Luminescence Vol. 40, Issue 1, Pages: 23-29(2019)
- 作者机构：
  
  1. 太原理工大学新材料工程技术研究中心,山西太原,030024
  2. 太原理工大学界面科学与工程教育部重点实验室,山西太原,030024
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61604104,21471111,51672185
- DOI：10.3788/fgxb20194001.0023
  CLC： TP394.1;TH691.9
- Received：29 March 2018，
  
  Revised：24 April 2018，
  
  Published Online：09 May 2018，
  
  Published：05 January 2019
- 稿件说明：
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仝广运, 贾伟, 樊腾等. 类金字塔状GaN微米锥的形貌及发光性能[J]. 发光学报, 2019,40(1): 23-29

TONG Guang-yun, JIA Wei, FAN Teng etc. Morphology and Optical Properties of GaN Micro-pyramid Structure[J]. Chinese Journal of Luminescence, 2019,40(1): 23-29
仝广运, 贾伟, 樊腾等. 类金字塔状GaN微米锥的形貌及发光性能[J]. 发光学报, 2019,40(1): 23-29 DOI： 10.3788/fgxb20194001.0023.

TONG Guang-yun, JIA Wei, FAN Teng etc. Morphology and Optical Properties of GaN Micro-pyramid Structure[J]. Chinese Journal of Luminescence, 2019,40(1): 23-29 DOI： 10.3788/fgxb20194001.0023.

摘要

三维结构GaN基LED能够解决二维GaN基薄膜LED中存在的量子限制斯塔克效应、效率骤降、发光波长单一等问题。基于此，本文对三维类金字塔状GaN微米锥的发光性能进行了详细的研究。通过金属有机化合物化学气相沉积原位沉积SiN

x

掩模层后，首先制备了底面尺寸为8 m、高度7.5 m的类金字塔状GaN微米锥，之后在其半极性面外延生长了3个周期的InGaN/GaN多量子阱。通过阴极荧光测试发现，类金字塔状GaN微米锥的半极性面上不同位置发光波长不同；变功率微区光致发光测试表明，类金字塔状GaN微米锥的半极性面在InGaN/GaN多量子阱沉积之后极化场较弱；对InGaN/GaN多量子阱进行了透射电镜表征，结合阴极荧光光谱的结果最终解释了In原子在类金字塔状GaN微米锥上的迁移机理。利用其半极性面不同位置发光波长不同的结构特点及光学特性，可以制备多波长发射LED。

Abstract

The recently developed 3D GaN-based light emitting diodes (LEDs) can solve problems associated with typical GaN-based thin film LEDs including the quantum-confined Stark effect

efficiency droop

and monochromatic wavelength. To resolve these issues

the micro-pyramids were synthesized and their luminescence properties were subsequently studied. First

GaN micro-pyramids with a base size of 8 m and height of 7.5 m were successfully fabricated after SiN

x

was deposited

in situ

by MOCVD

followed by three deposition periods of InGaN/GaN multiple quantum wells on the semi-polar facet of the GaN micro-pyramids. The cathodoluminescence measurements showed that the wavelength of the emission peaks varied on the semi-polar facet of the GaN micro-pyramids. According to micro-photoluminescence measurements obtained using different excitation power densities

the polarization field on the semi-polar facets of the GaN micro-pyramids containing InGaN/GaN multiple quantum wells was rather weak. The atomic migration mechanism was determined from the cathodoluminescence and transmission electron microscopy results. The GaN micro-pyramids can possibly be used for fabricating LEDs with multi-color emission due to their unique structures and optical properties.

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Keywords

references

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