Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots

XU De-qian; XU Jia-xin; ZHUANG Shi-wei; LI Guo-xing; ZHANG Bao-lin

doi:10.3788/fgxb20194001.0017

您当前的位置：

首页 >

文章列表页 >

Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots
- Chinese Journal of Luminescence Vol. 40, Issue 1, Pages: 17-22(2019)
- 作者机构：
  
  集成光电子学国家重点实验室吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61574069)
- DOI：10.3788/fgxb20194001.0017
  CLC： O482.31
- Received：03 April 2018，
  
  Revised：28 May 2018，
  
  Published Online：09 May 2018，
  
  Published：05 January 2019
- 稿件说明：
移动端阅览
徐德前, 徐佳新, 庄仕伟等. 压强对GaSb/GaAs量子点形貌各向异性的影响[J]. 发光学报, 2019,40(1): 17-22

XU De-qian, XU Jia-xin, ZHUANG Shi-wei etc. Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(1): 17-22
徐德前, 徐佳新, 庄仕伟等. 压强对GaSb/GaAs量子点形貌各向异性的影响[J]. 发光学报, 2019,40(1): 17-22 DOI： 10.3788/fgxb20194001.0017.

XU De-qian, XU Jia-xin, ZHUANG Shi-wei etc. Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(1): 17-22 DOI： 10.3788/fgxb20194001.0017.

摘要

采用低压金属有机物化学气相沉积（LP-MOCVD）技术在GaAs （001）衬底上制备GaSb量子点，研究了反应室压强对改善GaSb/GaAs量子点形貌各向异性的影响。通过Sb表面处理方法，在GaAs衬底上形成低表面能的Sb-Sb浮层，实现以界面失配（IMF）生长模式对GaSb量子点诱导生长。用原子力显微镜（AFM）对各样品的量子点形貌进行了表征，结果表明GaSb量子点形貌各向异性明显且沿[110]方向拉长。在压强条件为10 kPa时，IMF生长模式导致不对称岛的长宽比大于3，由于低能量（111）侧面的存在，GaSb量子点优先沿[110]

方向生长而不是与之垂直的[110]方向。压强降低至4 kPa时量子点密度增大为8.310

-2

，量子点形貌转变为对称的半球形且长宽比约为1。低的压强降低了吸附原子的扩散激活能从而增大了扩散长度，可以有效改善GaSb量子点的各向异性。

Abstract

GaSb quantum dots were directly grown on (001) GaAs substrates by metal organic chemical vapor deposition. The effect of reaction chamber pressure on the size anisotropy of GaSb/GaAs quantum dots was analyzed. By the Sb surface treatment

a floating layer of Sb-Sb with low surface energy is formed on a GaAs substrate to achieve growth of GaSb quantum dots with an interfical misfit(IMF) growth mode. The morphologies of GaSb quantum dots were characterized by atomic force microscopy (AFM)

and the results showed that the anisotropy of GaSb quantum dots is significant and elongated along the[110] direction. With the reaction pressure of 10 kPa

the aspect ratio of the asymmetric island caused by IMF growth mode is more than 3. Because of the low energy for (111) sidewalls

the GaSb quantum dots preferentially grow up along the[110]

direction rather than the[110] direction. When eaction pressure is reduced to 4 kPa

the density of quantum dots increases to 8.310

-2

. The shape of the quantum dots transforms into a symmetrical hemisphere and the aspect ratio is approximately 1. Because the low pressure reduces the activation energy of the atoms and increases the diffusion length

the anisotropy of GaSb quantum dots can be effectively improved.

关键词

Keywords

references

NAINANI A,IRISAWA T,YUAN Z,et al.. Optimization of the Al2O3/GaSb interface and a high-mobility GaSb pMOSFET[J]. IEEE Trans. Elect. Dev., 2011,58(10):3407-3415.

BURKE R A,WENG X J,KUO M W,et al.. Growth and characterization of unintentionally doped GaSb nanowires[J]. J. Electron. Mater., 2010,39(4):355-364.

张仲义,秦素英,魏相飞. InAs/AlSb/GaSb量子阱中的双色光吸收[J]. 发光学报, 2017,38(7):930-935. ZHANG Z Y,QIN S Y,WEI X F. Two color optical absorption in InAs/AlSb/GaSb quantum well system[J].Chin. J. Lumin., 2017,38(7):930-935. (in Chinese)

戎佳敏,邢恩博,赵帅,等. 2m GaSb基低垂直发散角布拉格反射波导激光器优化设计[J]. 发光学报, 2015,36(12):1434-1439. RONG J M,XING E B,ZHAO S,et al.. Modeling of 2m GaSb based bragg reflection waveguide lasers with ultra-low vertical divergence[J]. Chin. J. Lumin., 2015,36(12):1434-1439. (in Chinese)

TATEBAYASHI J,LIANG B L,BUSSIAN D A,et al.. Formation and optical characteristics of type-Ⅱ strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode[J]. IEEE Trans. Nanotechnol., 2009,8(2):269-274.

WANG Y,RUTERANA P,KRET S,et al.. The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism[J]. Appl. Phys. Lett., 2013,102(5):052102-1-5.

GUTIRREZ M,ARAUJO D,JURCZAK P,et al.. Solid solution strengthening in GaSb/GaAs:a mode to reduce the TD density through Be-doping[J]. Appl. Phys. Lett., 2017,110(9):131911.

WANG Y,RUTERANA P,CHEN J,et al.. Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface[J]. ACS Appl. Mater. Interfaces, 2013,5(19):9760-9764.

TAN K H,JIA B W,LOKE W K,et al.. Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process[J]. J. Cryst. Growth, 2015,427:80-86.

KIM J H,SEONG T Y,MASON N J,et al.. Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy[J]. J. Electron. Mater., 1998,27(5):466-471.

QIU Y X,LI M C,WANG Y T,et al.. Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution X-ray diffraction[J]. Phys. Scr., 2007,129:27-30.

HSIAO C J,HA M T H,HSU C Y,et al.. Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment[J]. Appl. Phys. Express, 2016,9(9):095502-1-4.

HSIAO C J,HA M T H,LIU C K,et al.. Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition[J]. J. Mater. Sci. Mater. Electron., 2017,28(1):846-855.

EL KAZZI S,DESPLANQUE L,COINON C,et al.. Compliance at the GaSb/GaP Interface by misfit dislocations array[J]. Adv. Mater. Res., 2011,324:85-88.

BALAKRISHNAN G,TATEBAYASHI J,KHOSHAKHLAGH A,et al.. Ⅲ/Ⅴ ratio based selectivity between strained stranski-krastanov and strain-free GaSb quantum dots on GaAs[J]. Appl. Phys. Lett., 2006,89(16):161104-1-3.

JIANG C,KAWAZU T,KOBAYASHI S,et al.. Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots[J]. J. Cryst. Growth, 2007,301-302:828-832.

TIMM R. Formation,Atomic Structure,and Electronic Properties of GaSb Quantum Dots in GaAs[D]. Berlin:Technische Universitt Berlin, 2007.

EL KAZZI S,DESPLANQUE L,WALLART X,et al.. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP[J]. J. Appl. Phys., 2012,111(12):123506-1-5.

LI G D,JIANG C,ZHU Q S,et al.. Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots[J]. Appl. Phys. Lett., 2011,98(3):032103-1-3.

KAWAZU T,NODA T,MANO T,et al.. Effects of Sb/As interdiffusion on optical anisotropy of GaSb quantum dots in GaAs grown by droplet epitaxy[J]. Jpn. J. Appl. Phys., 2012,51(11R):115201.

BRACHT H,NICOLS S P,WALUKIEWICZ W,et al.. Large disparity between gallium and antimony self-diffusion in gallium antimonide[J]. Nature, 2000,408(6808):69-72.

陆大成,段树坤. 金属有机化合物气相外延基础及应用[M]. 北京:科学出版社, 2009. LU D C,DUAN S K. Organometallic Vapor-phase Epitaxy:Basis and Application[M]. Beijing:Science Press, 2009. (in Chinese)

STRINGFELLOW G B. Organometallic Vapor-phase Epitaxy[M]. 2nd ed. San Diego:Academic Press, 1999.

Views

141

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells

Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED

Research on Heating Uniformity of MOCVD Heating Device

Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

Related Author

LU Hong-bo

LI Ge

LI Xin-yi

ZHANG Wei

HU Shu-hong

DAI Ning

XU De-qian

ZHUANG Shi-wei

Related Institution

University of Chinese Academy of Sciences

Shanghai Institute of Space Power-sources

Shanghai Institute of Technology Physics, Chinese Academy of Sciences

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

National Institute of LED on Silicon Substrate, Nanchang University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰