Invalid Analysis and Dependability Research of GaN-based White LED

SONG Jia-liang; WEN Shang-sheng; MA Bing-xu; FU Min; HU Jie-pin; PENG Xing; FANG Fang; LIAO

doi:10.3788/fgxb20183912.1705

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Invalid Analysis and Dependability Research of GaN-based White LED

更新时间：2020-08-12

- Invalid Analysis and Dependability Research of GaN-based White LED
- Chinese Journal of Luminescence Vol. 39, Issue 12, Pages: 1705-1713(2018)
- 作者机构：
  
  1. 华南理工大学发光材料与器件国家重点实验室,广东广州,510640
  2. 复旦大学上海超精密光学制造工程技术研究中心上海,200433
  3. 广东金鉴检测科技有限公司,广东广州,511300
  4. 广州虎辉照明科技公司,广东广州,510170
  5. 华南师范大学美术学院,广东广州,510631
- 作者简介：
- 基金信息：
  
  Supported by Science and Technology Plan Programs of Guangdong Province(2017B0101140
- DOI：10.3788/fgxb20183912.1705
  CLC： TN312.8;TN304.2
- Received：04 March 2018，
  
  Revised：19 June 2018，
  
  Published Online：27 June 2018，
  
  Published：05 December 2018
- 稿件说明：
移动端阅览
宋嘉良, 文尚胜, 马丙戌等. GaN基白光LED可靠性研究与失效分析[J]. 发光学报, 2018,39(12): 1705-1713

SONG Jia-liang, WEN Shang-sheng, MA Bing-xu etc. Invalid Analysis and Dependability Research of GaN-based White LED[J]. Chinese Journal of Luminescence, 2018,39(12): 1705-1713
宋嘉良, 文尚胜, 马丙戌等. GaN基白光LED可靠性研究与失效分析[J]. 发光学报, 2018,39(12): 1705-1713 DOI： 10.3788/fgxb20183912.1705.

SONG Jia-liang, WEN Shang-sheng, MA Bing-xu etc. Invalid Analysis and Dependability Research of GaN-based White LED[J]. Chinese Journal of Luminescence, 2018,39(12): 1705-1713 DOI： 10.3788/fgxb20183912.1705.

摘要

针对LED样品检测中的样品短路失效、LED光源黑化、光通量下降和芯片表面通孔异常现象，采用金相切片、机械微操、静电测试等方式结合扫描电镜和能谱仪（EDS）等表征手段对失效机制进行了分析，揭示了LED失效原因。包括镀层银离子与杂质硫离子导致光源黑化；芯片抗静电电压低，部分样品发生静电击穿；失效芯片通孔下面的Ni-Sn共晶层存在大量空洞，使得复杂结构的芯片通孔应力不均，样品工作时芯片表面开裂破碎，从而导致PN结短路失效；封装胶中残存的杂质离子腐蚀芯片负电极导致电极脱落而出现漏电、光衰和死灯等现象。

Abstract

The phenomenon of LED sample detection and its failure mechanism were reported. This phenomenon included the short-circuit failure

LED light source

the flux decreased and blackening the surface of the chip hole anomaly. We used many methods

including metallographic

mechanical micro and static test

combining with many instruments

including optical microscope

scanning electron microscope and X-ray analysis characterization. The analysis reveals that LED abnormalities and failures are caused by the following reasons. First

the coating of silver ion and impurity sulfur ions lead to blackening of the light source. Second

the antistatic voltage of the chip is low. Some samples were subjected to electrostatic breakdown. And in addition

a large number of voids exist in the Ni-Sn eutectic layer beneath the view of the chip. It causes the uneven stress of the chip through the complex structure

the thermal conductivity decreases

and the chip surface cracks and breaks while the sample is working. This results in short-circuit fault of PN junction. Third

residual impurity ions in the encapsulation adhesive corrode the negative electrode of the chip. It causes the electrode to fall off. It leads to leakage

light weak and dead lights.

关键词

Keywords

references

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