Pressure-induced K-&Lambda; Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2

FU Xin-peng; ZHOU Qiang; QIN Li; LI Fang-fei; FU Xi-hong

doi:10.3788/fgxb20183912.1647

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Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe₂ and MoSe₂

更新时间：2020-08-12

- Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe₂ and MoSe₂
- Chinese Journal of Luminescence Vol. 39, Issue 12, Pages: 1647-1653(2018)
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  Supperted by National Key Research and Development Program of China(2018YFB1107600)(
- DOI：10.3788/fgxb20183912.1647
  CLC： O472+.3
- Received：12 August 2018，
  
  Revised：17 October 2018，
  
  Published：05 December 2018
- 稿件说明：
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付鑫鹏, 周强, 秦莉等. 单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变[J]. 发光学报, 2018,39(12): 1647-1653

FU Xin-peng, ZHOU Qiang, QIN Li etc. Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2[J]. Chinese Journal of Luminescence, 2018,39(12): 1647-1653
付鑫鹏, 周强, 秦莉等. 单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变[J]. 发光学报, 2018,39(12): 1647-1653 DOI： 10.3788/fgxb20183912.1647.

FU Xin-peng, ZHOU Qiang, QIN Li etc. Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2[J]. Chinese Journal of Luminescence, 2018,39(12): 1647-1653 DOI： 10.3788/fgxb20183912.1647.

摘要

采用机械剥离法在金刚石对顶砧中制备了单层WSe

和MoSe

样品，利用高压微区荧光光谱测量技术，在氩传压介质环境下对其激子发光行为进行了高压调控研究。其中单层WSe

的中性和负电激子演化趋势在2.43 GPa处出现拐点，单层MoSe

中性激子发光在3.7 GPa处发生了劈裂。结合第一性原理计算分析，确认该不连续现象的产生机制为压力诱导的导带底K-交互转变。该结果可以扩大至整个二维层状材料体系，为发展激子器件垫定基础。

Abstract

Monolayer MoSe

and WSe

samples were prepared by mechanical exfoliation in diamond anvil cell(DAC). The high-pressure micro-area fluorescence spectroscopy technique was used to study excitons emission behavior under pressure in argon pressure-transmitting medium(PTM). The neutral and negative exciton evolutionary trends of monolayer WSe

showed an inflection point at 2.43 GPa

and the neutral exciton emission of monolayer MoSe

appeared a new split peak at 3.7 GPa. Combined with the first-principles calculation and analysis

we confirmed that the mechanism of these discontinuities is the pressure-induced conduction band bottom K- crossover. This result can be extended to the entire two-dimensional layered material family

and laying foundation for the development of exciton devices.

关键词

Keywords

references

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南京邮电大学有机电子与信息显示国家重点实验室培育基地, 江苏南京 210023

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Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2

DOI：10.3788/fgxb20183912.1647

摘要

Abstract

关键词

Keywords

references

Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe₂ and MoSe₂