High-performance Photodetectors Based on Cs-doped (NH2CH=NH2)1-xCsxPbI3 Thin Film

ZHANG Meng; ZHANG Fan; ZHANG Hua-ye; HU Yu-feng; LOU Zhi-dong

doi:10.3788/fgxb20183911.1613

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High-performance Photodetectors Based on Cs-doped (NH₂CH=NH₂)_1-xCs_xPbI₃ Thin Film

更新时间：2020-08-12

- High-performance Photodetectors Based on Cs-doped (NH₂CH=NH₂)_1-xCs_xPbI₃ Thin Film
- Chinese Journal of Luminescence Vol. 39, Issue 11, Pages: 1613-1620(2018)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61475014,61674012,61675018
- DOI：10.3788/fgxb20183911.1613
  CLC： O482.31
- Received：09 March 2018，
  
  Revised：10 April 2018，
  
  Published Online：09 May 2018，
  
  Published：05 November 2018
- 稿件说明：
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张猛, 张帆, 张华野等. Cs掺杂的高性能(NH2CH=NH2)1-xCsxPbI3光电探测器[J]. 发光学报, 2018,39(11): 1613-1620

ZHANG Meng, ZHANG Fan, ZHANG Hua-ye etc. High-performance Photodetectors Based on Cs-doped (NH2CH=NH2)1-xCsxPbI3 Thin Film[J]. Chinese Journal of Luminescence, 2018,39(11): 1613-1620
张猛, 张帆, 张华野等. Cs掺杂的高性能(NH2CH=NH2)1-xCsxPbI3光电探测器[J]. 发光学报, 2018,39(11): 1613-1620 DOI： 10.3788/fgxb20183911.1613.

ZHANG Meng, ZHANG Fan, ZHANG Hua-ye etc. High-performance Photodetectors Based on Cs-doped (NH2CH=NH2)1-xCsxPbI3 Thin Film[J]. Chinese Journal of Luminescence, 2018,39(11): 1613-1620 DOI： 10.3788/fgxb20183911.1613.

摘要

FAPbI

有机无机杂化钙钛矿光电探测器还存在一些问题，合成纯相光敏钙钛矿需要较高的退火温度（150~160℃），不利于柔性器件的制备；另外，在常温下，FAPbI

容易发生的相变，器件的空气稳定性很差。本文制备了Cs掺杂的二极管型FA

PbI

光电探测器。结果表明，Cs的掺杂一方面有效降低了合成纯相FA钙钛矿的退火温度，另一方面提高了器件性能以及空气稳定性。对比不同Cs掺杂浓度的器件性能，发现掺杂摩尔分数为10%时，器件性能最优，其开关比可达1.610

，响应速度达到7.1 s，在350~800 nm宽光谱范围内探测率都在10

cmHz

1/2

-1

（Jones）量级。本研究为实现低温制备高性能高稳定性的FA钙钛矿光电探测器提供了一条可行的途径。

Abstract

For NH

CH=NH

PbI

(FAPbI

) photodetectors

the challenges are that the high annealing temperature (150-160℃) for pure -FAPbI

perovskite are not suitable for flexible substrates and the transition from to phase makes the photodetectors unstable in air at room temperature. In this paper

we synthesized pure -phase FA

PbI

perovskite by doping Cs at an annealing temperature of 100℃ and fabricated FA

PbI

photodetectors. The devices exhibit best performance and air stability. At -0.5 V

a high on/off current ratio of 1.610

and fast response times of 7.1 s are obtained

and the specific detectivities are above 10

cmHz

1/2

-1

(Jones) over a broad spectral range from 350-800 nm.

关键词

Keywords

references

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