LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. Temperature Field Distribution and Transmittance Characteristics of VO<sub>2</sub> Films Irradiated by Laser[J]. Chinese Journal of Luminescence, 2018,39(11): 1604-1612
LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. Temperature Field Distribution and Transmittance Characteristics of VO<sub>2</sub> Films Irradiated by Laser[J]. Chinese Journal of Luminescence, 2018,39(11): 1604-1612 DOI: 10.3788/fgxb20183911.1604.
Temperature Field Distribution and Transmittance Characteristics of VO2 Films Irradiated by Laser
In order to explore the temperature field distribution and power density threshold of 1 064 nm laser that irradiate film and make it phase change in 100 s
and to compare the difference between the transmittance modulation characteristics in the near infrared and mid-infrared band
a model of laser irradiation was set up and the temperature field was simulated. Then
the 1 064 nm laser transmittance response characteristic with time was tested in the front and back face of VO
2
film with different laser power density in 100 s separately. VO
2
thin films in the experiment were prepared by molecular beam epitaxy on Al
2
O
3
substrate. Simulation results show that the film reaches the phase-transition temperature in 1 ms with 25 Wmm
-2
laser power density. It is found that the laser power density threshold is 4.1 Wmm
-2
and 5.39 Wmm
-2
when irradiating the front and back face of the VO
2
thin film with 50 nm thickness respectively. The transmittance modulation depth of 1 064 nm is approximately 13% of VO
2
thin films with 30 nm thickness. However
compared with 62% for 3 459 nm laser
the transmittance modulation characteristic in near infrared is not obvious for VO
2
thin films.
关键词
Keywords
references
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