Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs

ZHANG Hua-ye; ZHANG Fan; ZHANG Meng; LOU Zhi-dong; TENG Feng

doi:10.3788/fgxb20183911.1542

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Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs

更新时间：2020-08-12

- Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs
- Chinese Journal of Luminescence Vol. 39, Issue 11, Pages: 1542-1548(2018)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(016YFB0700703)
- DOI：10.3788/fgxb20183911.1542
  CLC： O47
- Received：22 February 2018，
  
  Revised：09 April 2018，
  
  Published Online：09 May 2018，
  
  Published：05 November 2018
- 稿件说明：
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张华野, 张帆, 张猛等. 交联PMMA修饰的PVA绝缘层对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2018,39(11): 1542-1548

ZHANG Hua-ye, ZHANG Fan, ZHANG Meng etc. Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs[J]. Chinese Journal of Luminescence, 2018,39(11): 1542-1548
张华野, 张帆, 张猛等. 交联PMMA修饰的PVA绝缘层对P3HT有机场效应晶体管性能的影响[J]. 发光学报, 2018,39(11): 1542-1548 DOI： 10.3788/fgxb20183911.1542.

ZHANG Hua-ye, ZHANG Fan, ZHANG Meng etc. Influence of PVA Insulator Modified with Cross-linked PMMA on The Performance of P3HT OFETs[J]. Chinese Journal of Luminescence, 2018,39(11): 1542-1548 DOI： 10.3788/fgxb20183911.1542.

摘要

利用1，6-二（三氯甲硅烷基）己烷（C

-Si）交联的聚甲基丙烯酸甲酯（C-PMMA）修饰聚乙烯醇（PVA）绝缘层（C-PMMA/PVA），并研究了修饰前后绝缘层的表面性质和电学性能。结果表明:经C-PMMA修饰后，虽然绝缘层表面粗糙度从0.386 nm增加到0.532 nm，电容由14.2 nF/cm

减小到11.5 nF/cm

，但绝缘层的水接触角显著变大，从36增加到68，表明修饰后表面极性显著下降；此外，C-PMMA修饰的绝缘层的漏电流密度降低了约2个数量级。用纯PVA和C-PMMA修饰的PVA两种绝缘层制备了具有底栅顶接触结构的3-己基噻吩（P3HT）有机薄膜场效应晶体管，C-PMMA修饰PVA后器件性能显著提高，开关比提高了约20倍，迁移率增大了约4倍，分别达到~10

-1

和3.310

-2

-1

，而且回滞现象明显降低。

Abstract

The surface and electrical characteristics of the bare poly(vinyl alcohol)(PVA) and PVA modified with cross-linked poly(methyl methacrylate)(C-PMMA) by 1

6-bis(trichlorosilyl)hexane(C

-Si)(C-PMMA/PVA) were studied. The surface roughness increases from 0.386 nm to 0.532 nm

and the capacitance drops to 11.5 nF/cm

from 14.2 nF/cm

by the cross linking

however

the contact angle of water is greatly raised from 36 to 68

indicating that the surface polarity of PVA is remarkably decreased by the modification of C-PMMA. Additionally

the leakage current of the C-PMMA-modified PVA layer is reduced by about 2 orders of magnitude. The C-PMMA/PVA as well as bare PVA insulating layers are utilized to fabricate organic field-effect transistors(OFETs) based on 3-hexyl thiophene (P3HT) with a bottom gate/top contact configuration. The performance of the device with the C-PMMA/PVA insulating layer is significantly improved

with the on/off ratio increased by 20 times and the mobility increased by 4 times

reaching~10

-1

and 3.310

-2

-1

respectively. Furthermore

the hysteresis of the P3HT OFET

which mainly originates from the high surface polarity of the PVA insulating layer

is reduced dramatically by the modification of a very thin C-PMMA film.

关键词

Keywords

references

WHITING G L, SCHWARTZ D E, NG T N, et al.. Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components[J]. Flex. Print. Electron., 2017, 2(3):034002.

ZHANG K, ZHANG J, ZHANG X, et al.. Synthesis and characterization of novel push-pull oligomer based on naphthodithiophene-benzothiodiazole for OFETs application[J]. Tetrahedron Lett., 2018, 59(7):641-644.

XIANG L, YING J, HAN J, et al.. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer[J]. Appl. Phys. Lett., 2016, 108(17):173301.

JIANG Y, GUO Y, LIU Y. Engineering of amorphous polymeric insulators for organic field-effect transistors[J]. Adv. Electron. Mater., 2017, 3(11):1700157.

RUZGAR S, CAGLAR M. Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor[J]. Synth. Met., 2017, 232:46-51.

SUN X, DI C A, LIU Y. Engineering of the dielectric-semiconductor interface in organic field-effect transistors[J]. J. Mater. Chem., 2010, 20(13):2599.

YE X, LIN H, YU X, et al.. High performance low-voltage organic field-effect transistors enabled by solution processed alumina and polymer bilayer dielectrics[J]. Synth. Met., 2015, 209:337-342.

LEE S H, KIM D Y, NOH Y Y. Solution-processed polymer-sorted semiconducting carbon nanotube network transistors with low-k/high-k bilayer polymer dielectrics[J]. Appl. Phys. Lett., 2017, 111(12):123103.

NOH Y Y, ZHAO N, CAIRONI M, et al.. Downscaling of self-aligned, all-printed polymer thin-film transistors[J]. Nat. Nanotechnol., 2007, 2(12):784-789.

JUNG S, ALBARIQI M, GRUNTZ G, et al.. A TIPS-TPDO-tetra CN-based n-type organic field-effect transistor with a cross-linked PMMA polymer gate dielectric[J]. ACS Appl. Mater. Interf., 2016, 8(23):14701-14708.

PARK Y J, CHA M J, YOON Y J, et al.. Improved performance in n-type organic field-effect transistors via polyelectrolyte-mediated interfacial doping[J]. Adv. Electron. Mater., 2017, 3(10):1700184.

PARK S, KIM C H, LEE W J, et al.. Sol-gel metal oxide dielectrics for all-solution-processed electronics[J]. Mater. Sci. Eng. R:Reports, 2017, 114:1-22.

QIU C, ZHANG Z, ZHONG D, et al.. Carbon nanotube feedback-gate field-effect transistor:suppressing current leakage and increasing on/off ratio[J]. ACS Nano, 2015, 9(1):969-977.

DIEMER PJ, HAYES J, WELCHMAN E, et al.. The influence of isomer purity on trap states and performance of organic thin-film transistors[J]. Adv. Funct. Mater., 2017, 3(1):168-173.

WANG H, WU Y, CONG C, et al.. Hysteresis of electronic transport in graphene transistors[J]. ACS Nano, 2010, 4(12):7221.

KALB W L, BATLOGG B. Calculating the trap density of states in organic field-effect transistors from experiment:a comparison of different methods[J]. Phys. Rev. B:Condens. Matter, 2009, 81(3):1718-1720.

SEO J H, KWON J H, SHIN S I, et al.. Organic thin film transistors with polyvinyl alcohol treated dielectric surface[J]. Semicond. Sci. Technol., 2007, 22(9):1039-1043.

JIN S H, ISLAM A E, KIM T I, et al.. Sources of hysteresis in carbon nanotube field-effect transistors and their elimination via methylsiloxane encapsulants and optimized growth procedures[J]. Adv. Funct. Mater.,2012, 22(11):2276-2284.

PADMA N. Hydrophobic dielectric surface influenced active layer thickness effect on hysteresis and mobility degradation in organic field effect transistors[J]. Superlatt. Microstruct., 2016, 90:198-206.

JANG G, YIM W, AHN Y H, et al.. Control of device characteristics by passivation of graphene field effect transistors with polymers[J]. Cur. Appl. Phys., 2016, 16(11):1506-1510.

NOH Y H, YOUNG P S, SEO S M, et al.. Root cause of hysteresis in organic thin film transistor with polymer dielectric[J]. Org. Electron., 2006, 7(5):271-275.

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