Effect of Si-doping on Barriers on Polarization Electric Field and Its Photoelectric Properties of GaN Based LED

ZHANG Zheng-yi; WANG Chao

doi:10.3788/fgxb20183910.1445

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Effect of Si-doping on Barriers on Polarization Electric Field and Its Photoelectric Properties of GaN Based LED

更新时间：2020-08-12

- Effect of Si-doping on Barriers on Polarization Electric Field and Its Photoelectric Properties of GaN Based LED
- Chinese Journal of Luminescence Vol. 39, Issue 10, Pages: 1445-1450(2018)
- 作者机构：
  
  1. 山西交通职业技术学院信息工程系,山西太原,030031
  2. 兰州交通大学光电技术与智能控制教育部重点实验室,甘肃兰州,730070
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20183910.1445
  CLC： TN321.8
- Received：25 June 2018，
  
  Revised：19 July 2018，
  
  Published：05 October 2018
- 稿件说明：
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张正宜, 王超,. 势垒硅掺杂对GaN基LED极化电场及其光电性能的影响[J]. 发光学报, 2018,39(10): 1445-1450

ZHANG Zheng-yi, WANG Chao,. Effect of Si-doping on Barriers on Polarization Electric Field and Its Photoelectric Properties of GaN Based LED[J]. Chinese Journal of Luminescence, 2018,39(10): 1445-1450
张正宜, 王超,. 势垒硅掺杂对GaN基LED极化电场及其光电性能的影响[J]. 发光学报, 2018,39(10): 1445-1450 DOI： 10.3788/fgxb20183910.1445.

ZHANG Zheng-yi, WANG Chao,. Effect of Si-doping on Barriers on Polarization Electric Field and Its Photoelectric Properties of GaN Based LED[J]. Chinese Journal of Luminescence, 2018,39(10): 1445-1450 DOI： 10.3788/fgxb20183910.1445.

摘要

势垒硅掺杂对InGaN量子阱中的电场及LED器件的光电性能有着重要的影响。采用66 KP方法计算了不同势垒硅掺杂浓度对量子阱中电场的变化，研究表明当势垒硅掺杂浓度

-3

时，阱垒界面处的电场强度会变大，这主要是由于硅掺杂浓度过高导致量子阱中界面电荷的聚集。进一步发现随着势垒掺杂浓度的升高，总非辐射复合随之增加，其中俄歇复合增加，而肖克莱-霍尔-里德复合随之减少，这是由于点陷阱的增大形成了缺陷能级。电流电压曲线表明势垒掺杂可有效改善GaN基LED的工作电压，这归于掺杂浓度的提高改善了载流子的传输特性。当掺杂浓度为1e

-3

时，获得了较高的内量子效率，这主要是由于适当的势垒掺杂降低了量子阱中界面电荷的损耗。

Abstract

Silicon doping in barrier has an important effect on the electric field in InGaN quantum wells and its photoelectric properties of LED devices. Electric field in multiple quantum wells with the different silicon doping concentration in barrier was calculated by 66 KP method. The results show that the electric field intensity in the well/barrier interface becomes larger when the silicon doping concentration in the barrier is above 1e

-3

which is mainly attributed to the accumulation of the interface charge in the quantum well. It is found that the total non radiation recombination increases and Auger recombination increases as barrier doping concentration increased

while Shockley-Read-Hall recombination decreases because of the increasing dot traps result in the formation of defect energy levels. The current-voltage curves show that the barrier doping can effectively improve the work voltage of GaN based LED because doped barrier will contribute to improve the transport characteristics of carriers. When silicon doping concentration is 1e

-3

the high internal quantum efficiency is obtained

which is mainly attributed to the reduction of interface charge loss in the quantum well due to the appropriate potential barrier doping.

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references

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