Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

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Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

更新时间：2020-08-12

- Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD
- Chinese Journal of Luminescence Vol. 39, Issue 10, Pages: 1425-1430(2018)
- 作者机构：
  
  集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61574069)
- DOI：10.3788/fgxb20183910.1425
  CLC： TP394.1;TH691.9
- Received：25 January 2018，
  
  Revised：24 March 2018，
  
  Published Online：24 April 2018，
  
  Published：05 October 2018
- 稿件说明：
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徐德前, 庄仕伟, 马雪等. 生长温度对MOCVD外延ZnO纳米结构的影响[J]. 发光学报, 2018,39(10): 1425-1430

XU De-qian, ZHUANG Shi-wei, MA Xue etc. Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD[J]. Chinese Journal of Luminescence, 2018,39(10): 1425-1430
徐德前, 庄仕伟, 马雪等. 生长温度对MOCVD外延ZnO纳米结构的影响[J]. 发光学报, 2018,39(10): 1425-1430 DOI： 10.3788/fgxb20183910.1425.

XU De-qian, ZHUANG Shi-wei, MA Xue etc. Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD[J]. Chinese Journal of Luminescence, 2018,39(10): 1425-1430 DOI： 10.3788/fgxb20183910.1425.

摘要

为了探究生长温度对外延ZnO纳米结构的影响，得到ZnO纳米结构可控生长的生长温度条件。利用金属有机化学气相沉积（MOCVD）方法，设计并获得了不同生长温度的ZnO外延样品，并对所有样品进行了表面形貌、光学特性、电学特性表征和结晶质量表征。实验结果表明:600℃生长的ZnO纳米柱横向尺寸最小，为65 nm左右，其光学特性也相对较好，晶体衍射峰的半峰宽最小，为0.165，晶粒尺寸最大，为47.6 nm；电学性质相对最优的为640℃生长的ZnO样品，霍尔迁移率高达23.5 cm

2

/（Vs）。通过结果分析发现，生长温度能影响外延ZnO的生长模式，从而影响ZnO的形貌、光学、电学和晶体质量等特性。

Abstract

To investigate the effect of growth temperature on epitaxial ZnO nanostructures and optimize the growth temperature conditions for controlled growth of ZnO nanostructures

ZnO epitaxial samples with different growth temperatures were designed and obtained by metal organic chemical vapor deposition (MOCVD). All the samples were characterized by surface morphology

optical

electrical and crystal quality characterizations. The experimental results show that the ZnO nanorods grown at 600℃ have the smallest transverse dimension of about 65 nm

which the optical properties are the best. Its FWHM of the diffraction peak is the smallest of 0.165 with the largest grain size of 47.6 nm. Among these samples

the sample grown at 640℃ has the relatively optimal electrical property

with the Hall mobility of 23.5 cm

2

/(Vs). Through the analysis of the results

it is found that the growth temperature can affect the growth mode of epitaxial ZnO and thus the morphology

optical

electrical and crystal properties of ZnO.

关键词

Keywords

references

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