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Influence of Isolation Etching Depth on RC Characteristic of GaN-based Micro-LED Chip
更新时间:2020-08-12
    • Influence of Isolation Etching Depth on RC Characteristic of GaN-based Micro-LED Chip

    • Chinese Journal of Luminescence   Vol. 39, Issue 9, Pages: 1297-1304(2018)
    • DOI:10.3788/fgxb20183909.1297    

      CLC: TN303;TN304
    • Received:09 January 2018

      Revised:30 March 2018

      Published Online:24 April 2018

      Published:05 September 2018

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  • YANG Zhuo-bo, HUANG Hua-mao, SHI Wei etc. Influence of Isolation Etching Depth on RC Characteristic of GaN-based Micro-LED Chip[J]. Chinese Journal of Luminescence, 2018,39(9): 1297-1304 DOI: 10.3788/fgxb20183909.1297.

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