Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C8 as Cathode Buffer Layer

LI Zhi-cheng; MIAO Ya; LIU Shao-wei; WANG Ya-ling; CAO Huan-qi; QIN Wen-jing; YANG Li-ying

doi:10.3788/fgxb20183909.1291

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Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C₈ as Cathode Buffer Layer

更新时间：2020-08-12

- Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C₈ as Cathode Buffer Layer
- Chinese Journal of Luminescence Vol. 39, Issue 9, Pages: 1291-1296(2018)
- 作者机构：
  
  1. 天津理工大学材料科学与工程学院显示材料与光电器件教育部重点实验室天津,300384
  2. 天津理工大学天津市光电显示材料与器件重点实验室天津,300384
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (51402214,61504097);Natu
- DOI：10.3788/fgxb20183909.1291
  CLC： TM914.4
- Received：14 December 2017，
  
  Revised：25 February 2018，
  
  Published Online：24 April 2018，
  
  Published：05 September 2018
- 稿件说明：
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李志成, 妙亚, 刘少伟等. PTCDI-C8作为阴极修饰层提高钙钛矿太阳能电池的性能[J]. 发光学报, 2018,39(9): 1291-1296

LI Zhi-cheng, MIAO Ya, LIU Shao-wei etc. Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C8 as Cathode Buffer Layer[J]. Chinese Journal of Luminescence, 2018,39(9): 1291-1296
李志成, 妙亚, 刘少伟等. PTCDI-C8作为阴极修饰层提高钙钛矿太阳能电池的性能[J]. 发光学报, 2018,39(9): 1291-1296 DOI： 10.3788/fgxb20183909.1291.

LI Zhi-cheng, MIAO Ya, LIU Shao-wei etc. Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C8 as Cathode Buffer Layer[J]. Chinese Journal of Luminescence, 2018,39(9): 1291-1296 DOI： 10.3788/fgxb20183909.1291.

摘要

采用N，N'-二正辛烷基-3，4，9，10-苝四甲酰二亚胺（PTCDI-C

）对钙钛矿电池电子传输层（PCBM）进行界面修饰以减少PCBM与Al电极之间的漏电流，提高阴极的电子收集效率。通过调节PTCDI-C

薄膜的厚度优化界面接触和电子传输性能。实验结果表明：当PTCDI-C

薄膜的厚度为20 nm时得到的器件性能最优。光电转换效率（PCE）由5.26%提高到了8.65%，开路电压（

）为0.92 V，短路电流（

）为15.68 mA/cm

，填充因子（FF）为60%。PTCDI-C

能够有效阻挡空穴向阴极传输，同时PTCDI-C

具有较高的电子迁移率以及较高的稳定性，在增加电子传输的同时，可减少环境对PCBM的侵蚀，提高了器件的稳定性。

Abstract

N'-di-n-octyl-3

10-perylene tetracarboxylic diimide(PTCDI-C

) was used as the interfacial layer of the electron transport layer PCBM to reduce the leakage current between PCBM and Al electrode and to improve the electron collecting efficiency of cathode. By adjusting the thickness of PTCDI-C

film

the interfacial contact and electron transport properties were optimized. Compared with the control devices

the power conversion efficiency (PCE) of the optimal device achieves 8.65% with 20 nm thickness PTCDI-C

film

with an open circuit voltage (

) of 0.92 V

a short circuit current (

) of 15.68 mA/cm

and a fill factor (FF) of 60%. PTCDI-C

layer can effectively block the hole transmitting to the cathode. With a higher electron mobility and stability

PTCDI-C

layer can reduce the environment erosion on the PCBM. In summary

the introduction of PTCDI-C

film as cathode buffer layer improves the performance and stability of the device.

关键词

Keywords

references

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Related Author

LIU Shao-wei

MIAO Ya

LI Zhi-cheng

WANG Ya-ling

QIN Wen-jing

CAO Huan-qi

YANG Li-ying

YIN Shou-gen

Related Institution

Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology

Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology

College of Photonic and Electronic Engineering， Fujian Normal University

College of Chemical Engineering and Material， Quanzhou Normal University

College of Physics and Information Engineering， Quanzhou Normal University

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