Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

HAN Jun; ZHAO Jia-hao; XING Yan-hui; SHI Feng-feng; YANG Tao-tao; ZHAO Jie; WANG Kai; LI Ta

doi:10.3788/fgxb20183909.1285

您当前的位置：

首页 >

文章列表页 >

Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

更新时间：2020-08-12

- Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
- Chinese Journal of Luminescence Vol. 39, Issue 9, Pages: 1285-1290(2018)
- 作者机构：
  
  1. 北京工业大学微电子学院光电技术教育部重点实验室, 北京 100124
  2. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州,215123
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61204011,11204009,61574011
- DOI：10.3788/fgxb20183909.1285
  CLC： O484.4
- Received：22 January 2018，
  
  Revised：05 April 2018，
  
  Published Online：24 April 2018，
  
  Published：05 September 2018
- 稿件说明：
移动端阅览
韩军, 赵佳豪, 邢艳辉等. MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响[J]. 发光学报, 2018,39(9): 1285-1290

HAN Jun, ZHAO Jia-hao, XING Yan-hui etc. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018,39(9): 1285-1290
韩军, 赵佳豪, 邢艳辉等. MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响[J]. 发光学报, 2018,39(9): 1285-1290 DOI： 10.3788/fgxb20183909.1285.

HAN Jun, ZHAO Jia-hao, XING Yan-hui etc. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018,39(9): 1285-1290 DOI： 10.3788/fgxb20183909.1285.

摘要

采用金属有机化学气相沉积（MOCVD）技术在Si（111）衬底上外延GaN薄膜，对高温AlN（HT-AlN）缓冲层在小范围内低生长压力（6.7~16.6 kPa）条件下对GaN薄膜特性的影响进行了研究。研究结果表明GaN外延层的表面形貌、结构和光学性质对HT-AlN缓冲层的生长压力有很强的的依赖关系。增加HT-AlN缓冲层的生长压力，GaN薄膜的光学和形貌特性均有明显改善，当HT-AlN缓冲层的生长压力为13.3 kPa时，得到无裂纹的GaN薄膜，其（002）和（102）面的X射线衍射峰值半高宽分别为735 arcsec和778 arcsec，由拉曼光谱计算得到的张应力为0.437 GPa，原子力显微镜（AFM）观测到表面粗糙度为1.57 nm。

Abstract

GaN films were grown on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). The influence of high temperature AlN(HT-AlN) buffer low various growth pressure (6.7-16.6 kPa) on GaN films was studied. It is found that

the surface morphology and structural and optical properties of the GaN epilayer strongly depend on HT-AlN buffer growth pressure. Increase the growth pressure of HT-AlN buffer

the optical and morphology properties of GaN film are both significantly improved

when the growth pressure of HT-AlN buffer layer was at 13.3 kPa

we obtained a crack-free GaN film

the XRD FWHM of (002) and (102) plane of GaN film are 735 and 778 arcsec

respectively. The tensile stress calculated from Raman spectra is 0.437 GPa

and RMS roughness of AFM 5 m5 m scan is 1.57 nm.

关键词

Keywords

references

JABLI F, ZAIDI M A, GASSOUMI M, et al.. Optical analysis of biaxial stress distribution in Al0.26Ga0.74N/GaN/Si HEMT's[J]. J. Alloys Compd., 2015, 650:533-536.

PARK J, DONG S S, KIM D H. Enhancement of light extraction in GaN-based light-emitting diodes by Al2O3-coated ZnO nanorod arrays[J]. J. Alloys Compd., 2014, 611(15):157-160.

CHOI P J, KIM J Y, KANG Y J, et al.. Light extraction enhancement of GaN based light emitting diodes by ZnO nanorod arrays[J]. J. Nanosci. Nanotechnol., 2014, 14(8):5965-5969.

KOJIMA N, NAKAMURA H, OHSHITA Y, et al.. Suppression of twin formation in layered In2Se3 grown on GaAs(111)[J]. Photovolt. Specialist Conf., 2015:1-3.

ROSKOWSKI A M, PREBLE E A, EINFELDT S, et al.. Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy[J]. Opto-Electron. Rev., 2002, 10(4):261-270.

HUANG W C, CHU C M, WONG Y Y, et al.. Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures[J]. Mater. Sci. Semicond. Proc., 2016, 45:1-8.

CHEN C Y, CHANG W M, CHUNG W L, et al.. Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells[J]. J. Cryst. Growth, 2014, 396(396):1-6.

YANG W J, WANG W L, LIU Z L, et al.. Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition[J]. Mater. Sci. Semicond. Proc., 2015, 39(1):499-505.

WEI M, WANG X L, PAN X, et al.. Effect of AlN buffer thickness on GaN epilayer grown on Si(111)[J]. Mater. Sci. Semicond. Proc., 2011, 14(2):97-100.

WANG K, XING Y H, HAN J, et al.. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate[J]. J. Alloys Compd., 2016, 671:435-439.

BOICHOT R, COUDURIER N, MERCIER F, et al.. Epitaxial growth of AlN on c-plane sapphire by high temperature hydride vapor phase epitaxy:influence of the gas phase N/Al ratio and low temperature protective layer[J]. Surf. Coatings Technol., 2013, 237:118-125.

NI Y Q, HE Z Y, ZHOU D Q, et al.. The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) template[J]. Superlatt. Microstruct., 2015, 83:811-818.

CHEN J, ZHANGA S M, ZHANGA B S, et al.. Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate[J]. J. Cryst. Growth, 2003, 254(3-4):348-352.

RDER C, LIPSKI F, HABEL F, et al.. Raman spectroscopic characterization of epitaxially grown GaN on sapphire[J]. J. Phys. D:Appl. Phys., 2013, 46(46):285302-285307.

HARIMA H. Properties of GaN and related compounds studied by means of Ranman scattering[J]. J. Phys.:Condensed Matter, 2002, 14(38):R967.

GIBART P. Metal organic vapour phase epitaxy of GaN and lateral overgrowth[J]. Rep. Prog. Phys., 2004, 67(2):2-13.

RAGHAVAN S, MANNING I C, WENG X J, et al.. Dislocation bending and tensile stress generation in GaN and AlGaN films[J]. J. Cryst. Growth, 2012, 359(359):35-42.

Views

118

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

GaN Growth on Si(111) by MOCVD

High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation

Recent Advances in Optical Microcavity Enhanced Fluorescence and Raman Spectroscopy

Related Author

SU Yue-yong

CHEN Zhi-tao

XU Ke

GUO Li-ping

PAN Yao-bo

YANG Xue-lin

YANG Zhi-jian

ZHANG Guo-yi

Related Institution

School of Physics, Research Center for Wide-band Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China

Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China

Research Center for Wide Gap Semiconductors Peking University Beijing 100871 China

Institute of Optoeletronics, Shenzhen University, Key Laboratory of Optoeletronic Devices and Systems, Guangdong Province, Key Laboratory of Optoeletronic Devices and Systems, Ministry of Education

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰