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Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
更新时间:2020-08-12
    • Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

    • Chinese Journal of Luminescence   Vol. 39, Issue 9, Pages: 1285-1290(2018)
    • DOI:10.3788/fgxb20183909.1285    

      CLC: O484.4
    • Received:22 January 2018

      Revised:05 April 2018

      Published Online:24 April 2018

      Published:05 September 2018

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  • HAN Jun, ZHAO Jia-hao, XING Yan-hui etc. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018,39(9): 1285-1290 DOI: 10.3788/fgxb20183909.1285.

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