HAN Jun, ZHAO Jia-hao, XING Yan-hui etc. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018,39(9): 1285-1290
HAN Jun, ZHAO Jia-hao, XING Yan-hui etc. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018,39(9): 1285-1290 DOI: 10.3788/fgxb20183909.1285.
Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
GaN films were grown on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). The influence of high temperature AlN(HT-AlN) buffer low various growth pressure (6.7-16.6 kPa) on GaN films was studied. It is found that
the surface morphology and structural and optical properties of the GaN epilayer strongly depend on HT-AlN buffer growth pressure. Increase the growth pressure of HT-AlN buffer
the optical and morphology properties of GaN film are both significantly improved
when the growth pressure of HT-AlN buffer layer was at 13.3 kPa
we obtained a crack-free GaN film
the XRD FWHM of (002) and (102) plane of GaN film are 735 and 778 arcsec
respectively. The tensile stress calculated from Raman spectra is 0.437 GPa
and RMS roughness of AFM 5 m5 m scan is 1.57 nm.
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references
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Related Institution
School of Physics, Research Center for Wide-band Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China
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State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China
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