LIU Shao-wei, MIAO Ya, LI Zhi-cheng etc. Effect of ITIC and PVK Co-doped PCBM on The Performance of Perovskite Solar Cells[J]. Chinese Journal of Luminescence, 2018,39(8): 1151-1156
LIU Shao-wei, MIAO Ya, LI Zhi-cheng etc. Effect of ITIC and PVK Co-doped PCBM on The Performance of Perovskite Solar Cells[J]. Chinese Journal of Luminescence, 2018,39(8): 1151-1156 DOI: 10.3788/fgxb20183908.1151.
Effect of ITIC and PVK Co-doped PCBM on The Performance of Perovskite Solar Cells
In order to passivate the defects of the perovskite surface and improve the viscosity and film-forming properties of the PCBM solution so as to enhance the performance of device
the non-fullerene acceptor molecules(ITIC) and electron-rich poly(n-vinylcarbazole) (PVK) are used as additives of PCBM film. As a result
the interface morphology and the performance of PCBM are optimized by adjusting the content of ITIC and PVK. The optimal device is obtained when the ITIC content is 6%(mass fraction). Compared with the control device without additives
the power conversion efficiency(PCE) is increased from 5.26% to 9.93%
with no hysteresis. It is found that the introduction of ITIC and PVK improves the film-forming properties of PCBM. Moreover
the surface defect state of perovskite is passivated. The synergy is beneficial to the charge transport and separation. In summary
the addition of PVK and ITIC inhibits the moisture and oxygen in the atmosphere into the device and improves the stability of the device.
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Related Author
LI Zhi-cheng
MIAO Ya
LIU Shao-wei
WANG Ya-ling
CAO Huan-qi
QIN Wen-jing
YANG Li-ying
YIN Shou-gen
Related Institution
Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology
Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology
College of Photonic and Electronic Engineering, Fujian Normal University
College of Chemical Engineering and Material, Quanzhou Normal University
College of Physics and Information Engineering, Quanzhou Normal University