Leakage Current Mechanism of GaSb/InSb/InP Heterostructure

XU Jia-xin; XU De-qian; ZHUANG Shi-wei; LI Guo-xing; ZHANG Yuan-tao; DONG Xin; WU Guo-guan

doi:10.3788/fgxb20183908.1143

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Leakage Current Mechanism of GaSb/InSb/InP Heterostructure

更新时间：2020-08-12

- Leakage Current Mechanism of GaSb/InSb/InP Heterostructure
- Chinese Journal of Luminescence Vol. 39, Issue 8, Pages: 1143-1150(2018)
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点实验室,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61574069)
- DOI：10.3788/fgxb20183908.1143
  CLC： TP394.1;TH691.9
- Received：02 January 2018，
  
  Revised：06 March 2018，
  
  Published Online：16 April 2018，
  
  Published：05 August 2018
- 稿件说明：
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徐佳新, 徐德前, 庄仕伟等. GaSb/InSb/InP异质结构的漏电流机制[J]. 发光学报, 2018,39(8): 1143-1150

XU Jia-xin, XU De-qian, ZHUANG Shi-wei etc. Leakage Current Mechanism of GaSb/InSb/InP Heterostructure[J]. Chinese Journal of Luminescence, 2018,39(8): 1143-1150
徐佳新, 徐德前, 庄仕伟等. GaSb/InSb/InP异质结构的漏电流机制[J]. 发光学报, 2018,39(8): 1143-1150 DOI： 10.3788/fgxb20183908.1143.

XU Jia-xin, XU De-qian, ZHUANG Shi-wei etc. Leakage Current Mechanism of GaSb/InSb/InP Heterostructure[J]. Chinese Journal of Luminescence, 2018,39(8): 1143-1150 DOI： 10.3788/fgxb20183908.1143.

摘要

为提高InSb红外探测器室温下的工作性能，设计了GaSb/InSb/InP异质结构，并对结构中俄歇复合与肖克莱-瑞德复合两种复合机制对漏电流的影响进行研究。利用TCAD仿真工具对InSb探测器件进行建模，分析得到能带结构与载流子分布。以能带参数为基础，根据连续性方程，结合漂移扩散模型，分析了俄歇复合在反偏压下的衰减效应，并综合肖克莱-瑞德复合的影响，计算出不同缺陷浓度下器件的漏电流。利用低压金属有机化学气相沉积（LP-MOCVD）技术制备GaSb/InSb/InP异质外延样品，对其漏电流进行测试，并与仿真结果进行对比分析。实验结果表明，计算结果与实验结果一致，器件工作性能的主要限制为肖克莱-瑞德复合机制，器件的漏电流为0.26 Acm

-2

，品质因子

为0.1 cm

。相比于同质InSb结构，器件的

提高了一个数量级，已接近实用化水平。

Abstract

In order to improve the performance of InSb infrared photo detectors operating at room temperature

a hetero-junction structure of GaSb/InSb/InP was proposed

and the contribution of Auger mechanism and Shockley-Read-Hall(SRH) mechanism to the leakage current was investigated. A theoretical model was established using TCAD tools

to obtain the band structure and carrier distribution. Then a simulation of the suppression of Auger mechanism under reverse bias and the total leakage current including Shockley-Read mechanism with different impurity concentrations was proceeded. The simulation was based on the carrier continuity equations

combined with the drift-diffusion transport model. Finally

samples were prepared using LP-MOCVD technique and a test of leakage current was carried out

and an analysis of the theoretical model and experiment data was presented. Experimental results indicate that the main limitation of the devices' performance is SRH mechanism

and there is a well fit of the theoretical model with the experiment data. The leakage current of the sample is 0.26 Acm

-2

and

is 0.1 cm

of the device increases by an order of magnitude compared to the homo-junction structure

and the device is close to practical level.

关键词

Keywords

references

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