Enhanced Photoluminescence of Tb3+ Ions andSnO2 Nanocrystals Codoped Silica Thin Films

XIE Kai-he; ZHANG Xiao-wei; SHU Jun-peng; SONG Hu-cheng; ZHANG Xin; ZHANG Hui-hong; WANG P

doi:10.3788/fgxb20183908.1100

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Enhanced Photoluminescence of Tb³⁺ Ions andSnO₂ Nanocrystals Codoped Silica Thin Films

更新时间：2020-08-12

- Enhanced Photoluminescence of Tb³⁺ Ions andSnO₂ Nanocrystals Codoped Silica Thin Films
- Chinese Journal of Luminescence Vol. 39, Issue 8, Pages: 1100-1106(2018)
- 作者机构：
  
  1. 宁波大学信息科学与工程学院, 浙江宁波 315211
  2. 南京大学固体微结构国家实验室, 江苏南京 210093
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61704094,61474068);Resea
- DOI：10.3788/fgxb20183908.1100
  CLC： O482.31
- Received：29 March 2018，
  
  Revised：25 May 2018，
  
  Published：05 August 2018
- 稿件说明：
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解凯贺, 张晓伟, 束俊鹏等. Tb3+离子与SnO2纳米晶体共掺杂SiO2薄膜荧光增强[J]. 发光学报, 2018,39(8): 1100-1106

XIE Kai-he, ZHANG Xiao-wei, SHU Jun-peng etc. Enhanced Photoluminescence of Tb3+ Ions andSnO2 Nanocrystals Codoped Silica Thin Films[J]. Chinese Journal of Luminescence, 2018,39(8): 1100-1106
解凯贺, 张晓伟, 束俊鹏等. Tb3+离子与SnO2纳米晶体共掺杂SiO2薄膜荧光增强[J]. 发光学报, 2018,39(8): 1100-1106 DOI： 10.3788/fgxb20183908.1100.

XIE Kai-he, ZHANG Xiao-wei, SHU Jun-peng etc. Enhanced Photoluminescence of Tb3+ Ions andSnO2 Nanocrystals Codoped Silica Thin Films[J]. Chinese Journal of Luminescence, 2018,39(8): 1100-1106 DOI： 10.3788/fgxb20183908.1100.

摘要

为了提高Tb

离子在硅基薄膜中的吸收截面与光发射效率，本文通过在硅基薄膜中引入具有更大吸收截面的SnO

纳米晶体，利用共振能量转移机制，大幅提高了Tb

离子的光发射效率。首先，利用限制性晶化原理，采用基于旋涂技术的溶胶凝胶法制备了Tb

离子与SnO

纳米晶体共掺杂非晶SiO

薄膜。然后，通过选择最佳掺杂浓度的SnO

纳米晶体作为敏化剂，Tb

离子掺杂SiO

薄膜在541 nm处的特征荧光发射强度增大了2个数量级。荧光激发谱与瞬态荧光寿命谱测试结果表明，Tb

离子与SnO

纳米晶体之间存在着有效的非辐射复合能量传递过程，1 000℃高温退火后，部分Tb

离子进入纳米晶体内部，导致共振能量转移效率大幅提高。以上研究表明：SnO

纳米晶体是一种潜在的Tb

离子敏化剂，可有效提高稀土Tb

离子掺杂SiO

薄膜的光发射效率。

Abstract

In order to improve the absorption cross section and increase the photoluminescence efficiency of Tb

ions doped silica thin film

SnO

nanocrystals with larger absorption cross sections were introduced into the silica thin films

and the greatly enhanced photoluminescence intensity was obtained because of resonant energy transfer mechanism. Firstly

and SnO

nanocrystals codoped silica thin films were fabricated by use of sol-gel and spin coating methods according to the restrictive crystallization principle. The characteristic photoluminescence emission intensity of Tb

ions at 541 nm was enhanced by two orders of magnitude for the film sensitized by SnO

nanocrystals with the optimized Sn

concentration. The photoluminescence excitation spectra indicate the non-radiative energy transfer process that takes place between Tb

ions and surface of SnO

nanocrystals. Meanwhile

the photoluminescence intensity decay curves suggest the partial incorporation of Tb

ions into the SnO

sites

which explains the greatly improving energy transfer efficiency. All these results indicate that SnO

nanocrystals could be benefit for enhanced photoluminescence of Tb

ions doped silica thin film as a potential sensitizer.

关键词

Keywords

references

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