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Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation
更新时间:2020-08-12
    • Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation

    • Chinese Journal of Luminescence   Vol. 39, Issue 8, Pages: 1095-1099(2018)
    • DOI:10.3788/fgxb20183908.1095    

      CLC: TN248
    • Received:11 December 2017

      Revised:18 February 2018

      Published Online:10 April 2018

      Published:05 August 2018

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  • TIAN Wei-nan, XIONG Cong, WANG Xin etc. Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation[J]. Chinese Journal of Luminescence, 2018,39(8): 1095-1099 DOI: 10.3788/fgxb20183908.1095.

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