Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation

TIAN Wei-nan; XIONG Cong; WANG Xin; LIU Su-ping; MA Xiao-yu

doi:10.3788/fgxb20183908.1095

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Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation

更新时间：2020-08-12

- Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation
- Chinese Journal of Luminescence Vol. 39, Issue 8, Pages: 1095-1099(2018)
- 作者机构：
  
  1. 中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
  2. 中国科学院大学材料科学与光电技术学院, 北京 100049
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(2017YFB0405303)
- DOI：10.3788/fgxb20183908.1095
  CLC： TN248
- Received：11 December 2017，
  
  Revised：18 February 2018，
  
  Published Online：10 April 2018，
  
  Published：05 August 2018
- 稿件说明：
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田伟男, 熊聪, 王鑫等. 基于GaAs膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究[J]. 发光学报, 2018,39(8): 1095-1099

TIAN Wei-nan, XIONG Cong, WANG Xin etc. Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation[J]. Chinese Journal of Luminescence, 2018,39(8): 1095-1099
田伟男, 熊聪, 王鑫等. 基于GaAs膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究[J]. 发光学报, 2018,39(8): 1095-1099 DOI： 10.3788/fgxb20183908.1095.

TIAN Wei-nan, XIONG Cong, WANG Xin etc. Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation[J]. Chinese Journal of Luminescence, 2018,39(8): 1095-1099 DOI： 10.3788/fgxb20183908.1095.

摘要

在红光半导体激光器芯片上采用GaAs介质膜进行无杂质空位扩散诱导量子阱混杂研究。激光器芯片的有源区由一个9 nm厚的GaInP量子阱和两个350 nm厚的AlGaInP量子垒构成，利用MOCVD方法在芯片表面生长GaAs介质膜。在950℃的情况下进行不同时长不同GaAs层厚度的高温快速热退火诱发量子阱混杂。通过光致发光光谱分析样品混杂之后的波长蓝移情况和光谱半峰全宽变化规律。当退火时间达到120 s时，样品获得53.4 nm的最大波长蓝移；在1 min退火时间下获得18 nm的最小光谱半峰全宽。

Abstract

Impurity-free vacancy diffusion (IFVD) induced quantum well intermixing (QWI) of red light diode laser wafer using GaAs encapsulation is explored. The wafer has an active region of a 9 nm-thick GaInP quantum well and two 350 nm-thick AlGaInP barriers. The GaAs dielectric layer is prepared through MOCVD. The QWI is induced by rapid thermal annealing at 950℃ at different times and different thicknesses of GaAs. Blue shifts and full width at half maximum (FWHM) are obtained through photoluminescence tests. A maximum blue shift of 53.4 nm is obtained at 120 s and an optimal FWHM of 18 nm by the IFVD-induced QWI is noted at 1 min.

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references

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