Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers

JIA Hui; LIANG Zheng; ZHANG Yu-qiang; SHI Lu-shan

doi:10.3788/fgxb20183907.0997

您当前的位置：

首页 >

文章列表页 >

Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers

更新时间：2020-08-12

- Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers
- Chinese Journal of Luminescence Vol. 39, Issue 7, Pages: 997-1001(2018)
- 作者机构：
  
  1. 公安海警学院基础部,浙江宁波,315801
  2. 宁波科技信息研究院研究中心,浙江宁波,315040
- 作者简介：
- 基金信息：
  
  Supported by General Research Project of Zhejiang Provincial Education Department(Y2
- DOI：10.3788/fgxb20183907.0997
  CLC： TN304.2
- Received：01 November 2017，
  
  Revised：18 January 2018，
  
  Published Online：23 March 2018，
  
  Published：05 July 2018
- 稿件说明：
移动端阅览
贾辉, 梁征, 张玉强等. 不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升[J]. 发光学报, 2018,39(7): 997-1001

JIA Hui, LIANG Zheng, ZHANG Yu-qiang etc. Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers[J]. Chinese Journal of Luminescence, 2018,39(7): 997-1001
贾辉, 梁征, 张玉强等. 不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升[J]. 发光学报, 2018,39(7): 997-1001 DOI： 10.3788/fgxb20183907.0997.

JIA Hui, LIANG Zheng, ZHANG Yu-qiang etc. Performance Enhancement of Nonpolar AlGaN-MSM Ultraviolet Photodetetors by Different Passivation Layers[J]. Chinese Journal of Luminescence, 2018,39(7): 997-1001 DOI： 10.3788/fgxb20183907.0997.

摘要

在

面蓝宝石衬底上，采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜，在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO

纳米颗粒与SiO

钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO

纳米颗粒钝化或SiO

钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明，SiO

纳米颗粒和SiO

钝化层可使器件暗电流下降1~2个数量级，达到nA量级。光谱响应测试发现，在5 V偏压下，探测器在300 nm处具有陡峭的截止边，这表明其具有很好的深紫外特性，光谱响应提高了10

倍，紫外可见抑制比高达10

。

Abstract

The metal-semiconductor-metal(MSM) structure ultraviolet(UV) photodetector was fabricated on the nonpolar AlGaN grown on

-sapphire substrates by metalorganic chemical vapor deposition(MOCVD) using high temperature treatments. The effects of passivation layers by adding SiO

nanoparticles(SiO

-NPs) or SiO

layers (SiO

-Ls) on optical and electrical properties of the nonpolar AlGaN-MSM UV photodetector were investigated systematically. The results indicate that the surface passivation of SiO

is an important way to enhance the UV performance of the nonpolar AlGaN-MSM UV photodetector. The fabricated devices are characterized by measurements of the dark

I-V

characteristic and the spectral response. It was found that the dark current of the AlGaN-MSM UV photodetector decreased by 1-2 orders of magnitude by SiO

-NPs or by SiO

-L

which can lower to the order of nA. The detector exhibits a sharp cut-off wavelength at about 300 nm

the spectral response is improved 10

times and the ratio of UV to visible reaches as high as 10

关键词

Keywords

references

ASIF KHAN M, SHATALOV M, MARUSKA H P, et al.. Ⅲ-nitride UV devices[J]. Jpn. J. Appl. Phys., 2005, 44(10):7191-7206.

OZBAY E, BIYIKLI N, KIMUKIN I, et al.. High-performance solar-blind photodetectors based on AlxGa1-xN heterostructures[J]. IEEE J. Select. Top. Quant. Electron., 2004, 10(4):742-751.

XIE F, LU H, CHEN D J, et al.. Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current[J]. Electron. Lett., 2011, 47(16):930-931.

ARANDA F J. Optoelectronic properties of semiconductors and superlattices:Vol. 2, GaN and related materials[J]. Optics Photon. News, 1999(10):66-78.

CHEN H, LIU K, HU L, et al.. New concept ultraviolet photodetectors[J]. Mater. Today, 2015, 18(9):493-502.

KHAN A, BALAKRISHNAN K, KATONA T. Ultraviolet light-emitting diodes based on group three nitrides[J]. Nat. Photon., 2008, 2(2):77-84.

THJEEL H A, SUHAIL A M, NAJI A N, et al.. Fabrication and characteristics of fast photo response ZnO/porous silicon UV photoconductive detector[J]. Adv. Mater. Phys. Chem., 2011, 1(3):387-425.

YANG W, VISPUTE R D, CHOOPUN S, et al.. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films[J]. Appl. Phys. Lett., 2001, 78(18):2787-2789.

CHEN X, ZHU H, CAI J, et al.. High-performance 4H-SiC-based ultraviolet p-i-n photodetector[J]. J. Appl. Phys., 2007, 102(2):024505-1-4.

PONCE F A. Microstructure and polarization fields in nitride semiconductors[J]. J. Phys.:Conference Series, 2011, 326:150-154.

RAZEGHI M. Short-wavelength solar-blind detectors-status, prospects, and markets[J]. Proc. IEEE, 2002, 90(6):1006-1014.

CHAKRABORTY A, HASKELL B A, KELLER S, et al.. Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-Independent electroluminescence emission peak[J]. Appl. Phys. Lett., 2004, 85(22):5143-5145.

NAVARRO A, RIVERA C, PEREIRO J, et al.. High responsivity a-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications[J]. Appl. Phys. Lett., 2009, 94(21):3380-3382.

成彩晶, 鲁正雄, 司俊杰, 等. AlGaN MSM紫外探测器[J]. 红外, 2006, 27(5):7-9. CHENG C J, LU Z X, SI J J, et al.. AlGaN MSM UV photodetector[J]. Infrared, 2006, 27(5):7-9. (in Chinese)

杨洪权. 非极性AlGaN材料生长及探测器制备技术研究[D]. 南京:东南大学, 2016. YANG H Q. Study on The Growth of Non-polar AlGaN Epi-layers and The Fabrication Technology for GaN-based Photodetectors[D]. Nanjing:Southeast Univenity, 2016. (in Chinese)

HSU J W P, MANFRA M J, MOLNAR R J, et al.. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates[J]. Appl. Phys. Lett., 2002, 81(1):79-81.

MORKOC H, DI CARLO A, CINGOLANI R, GaN-based modula tion doped FETs and UV detectors[J]. Solid-State Electron., 2002, 46:157-202.

ROGALSKI M, ROGALSKI A. Semiconductor ultraviolet detectors[J]. J. Appl. Phys., 1996, 79(10):7433-7473.

HERRERA M, CHI M, BONDS M, et al.. Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall[J]. Appl. Phys. Lett., 2008, 93(9):093106-1-3.

KAWAHARA N, TOMITA E, KAGAJYO H. Homogeneous charge compression ignition combustion with dimethyl ether-Spectrum analysis of chemiluminescence[J]. Sae Trans., 2003, 112:1214-1221.

WANG C, CHO S J, KIM N Y. Comparison of SiO2-based double passivationscheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs[J]. Microelectron. Eng., 2013, 109(C):24-27.

CARRANO J C, LI T, GRUDOWSKI P A, et al.. Comprehensive characterization of metal-semiconductor-metal ultraviolet photodectors fabricated[J]. J. Appl. Phys., 1998, 83(11):6148-6160.

Views

231

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Highly Efficient Perovskite Solar Cells and Modules Enabled by In-situ Modification of Buried Interface

Passivation of Perovskite Buried-interface Using Phenethylamine for Enhanced Solar Cell Performance

Surface and Luminescence Properties of GaAs(100) by Hydrazine Solution Passivation

Passivation of GaAs(100) Surface by 1-Octadecanethiol

Effect of Light Soaking on Photoluminescence Quantum Efficiency of CH₃NH₃PbI₃ Films

Related Author

LIU Chong

GONG Jian

CHEN Qian

YANG Huidong

MA Meng’en

LI Weile

WANG Yao

YAN Weibo

Related Institution

Faculty of Intelligent Manufacturing， Wuyi University

Institute of New Energy Technology， College of Information Science and Technology， Jinan University

State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials （IAM）， Nanjing University of Posts & Telecommunications

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology

吉林建筑大学电气与计算机学院吉林省建筑电气综合节能重点实验室

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰