Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO2 Active Layer

ZHANG Jian-dong; LIU Xian-zhe; ZHANG Xiao-chen; LI Xiao-qing; WANG Lei; YAO Ri-hui; NING H

doi:10.3788/fgxb20183907.0968

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Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO₂ Active Layer

更新时间：2020-08-12

- Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO₂ Active Layer
- Chinese Journal of Luminescence Vol. 39, Issue 7, Pages: 968-973(2018)
- 作者机构：
  
  华南理工大学材料科学与工程学院, 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20183907.0968
  CLC： TN321.5
- Received：16 November 2017，
  
  Revised：11 December 2017，
  
  Published Online：01 February 2018，
  
  Published：05 July 2018
- 稿件说明：
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张建东, 刘贤哲, 张啸尘等. 硅掺杂氧化锡柔性薄膜晶体管的制备与特性[J]. 发光学报, 2018,39(7): 968-973

ZHANG Jian-dong, LIU Xian-zhe, ZHANG Xiao-chen etc. Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO2 Active Layer[J]. Chinese Journal of Luminescence, 2018,39(7): 968-973
张建东, 刘贤哲, 张啸尘等. 硅掺杂氧化锡柔性薄膜晶体管的制备与特性[J]. 发光学报, 2018,39(7): 968-973 DOI： 10.3788/fgxb20183907.0968.

ZHANG Jian-dong, LIU Xian-zhe, ZHANG Xiao-chen etc. Preparation and Properties of Flexible Thin Film Transistors with Si-incorporated SnO2 Active Layer[J]. Chinese Journal of Luminescence, 2018,39(7): 968-973 DOI： 10.3788/fgxb20183907.0968.

摘要

研究了柔性非晶硅掺杂氧化锡（SiSnO，STO）薄膜晶体管的电学特性及其在弯曲状态下的电学特性。通过射频磁控溅射在聚酰亚胺（Polyimide，PI）衬底上制备出了柔性非晶硅掺杂氧化锡薄膜晶体管。通过对比不同退火温度的器件性能，发现在300℃能获得最佳器件性能，其饱和迁移率达到2.71 cm

-1

，开关比高于10

，亚阈值摆幅为1.95 Vdec

-1

，阈值电压为2.42 V。对器件在不同曲率半径（5，10，20，30 mm）状态下进行输出特性和转移特性测试，发现其在弯曲状态下仍具有良好的电学性能。

Abstract

A kind of flexible amorphous silicon doped tin oxide(SiSnO

STO) thin film transistor (TFT) with anti-bending property of polyimide as a flexible substrate was prepared by RF magnetron sputtering method. By comparing the performance of the devices with different annealing temperatures

it is found that the best device performance is achieved at 300℃

the field effect mobility is 2.71 cm

-1

the switching ratio is higher than 10

and the subthreshold swing is 1.95 Vdec

-1

and the threshold voltage is 2.42 V. By measuring the output characteristics and transfer characteristics of the device at different radius of curvature(5

30 mm)

the device is still operating well under the four different radii of curvature.

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Keywords

references

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