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Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED
更新时间:2020-08-12
    • Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED

    • Chinese Journal of Luminescence   Vol. 39, Issue 7, Pages: 961-967(2018)
    • DOI:10.3788/fgxb20183907.0961    

      CLC: O484.4;TH691.9
    • Received:18 October 2017

      Revised:24 February 2018

      Published Online:23 March 2018

      Published:05 July 2018

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  • QIU Yue, DING Jie, ZHANG Jian-li etc. Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED[J]. Chinese Journal of Luminescence, 2018,39(7): 961-967 DOI: 10.3788/fgxb20183907.0961.

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