QIU Yue, DING Jie, ZHANG Jian-li etc. Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED[J]. Chinese Journal of Luminescence, 2018,39(7): 961-967
QIU Yue, DING Jie, ZHANG Jian-li etc. Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED[J]. Chinese Journal of Luminescence, 2018,39(7): 961-967 DOI: 10.3788/fgxb20183907.0961.
Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED
InGaN/GaN multiple quantum wells(MQWs) yellow light-emitting diodes(LEDs) were grown on patterned silicon substrate by metal org anic vapor deposition. The effect of diff erent quantum well growth pressure on the photoelectric properties of yellow light LED has been investigated.The crystal quality was characterized by high resolution X-ray diffraction(HRXRD) and fluorescence microscope(FL)
and the photoelectric properties were characterized by using an integrated integrating sphere. the results review that increased pressure decreases In incorporation
but also enhances the uniformity
contributing to the lower point defects but roughness interface. The maximum of external quantum efficiency improves significantly under the pressure 4
6.65
10
13.3 kPa
respectively 16.60%
23.07%
26.40%
27.66%. However
it is noted that more efficiency droop appears with the growth pressure at 13.3 kPa. Under the working current of 20 Acm
-2
the EQE of A
B
C and D were 16.60%
19.77%
20.03% and 19.45%
respectively. The best photoelectric performance of the device can be obtained when the growth pressure is set to 10 kPa.
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references
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