WANG Zhi-wei, HAO Yong-qin, LI Yang etc. Study of SiO<sub>2</sub> Thin Films Stress Deposited on GaSb Substrate by PECVD[J]. Chinese Journal of Luminescence, 2018,39(7): 935-941
WANG Zhi-wei, HAO Yong-qin, LI Yang etc. Study of SiO<sub>2</sub> Thin Films Stress Deposited on GaSb Substrate by PECVD[J]. Chinese Journal of Luminescence, 2018,39(7): 935-941 DOI: 10.3788/fgxb20183907.0935.
Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD
film deposited on GaSb substrate with larger lattice mismatch by plasma enhanced chemical vapor deposition(PECVD) was investigated. The SiO
2
film was experimentally tested based on the curvature model by changing the process parameters of PECVD
such as deposition temperature
RF power
cavity pressure and gas flow ratio. And the stress was calculated by Stoney formula. The effects of these parameters on the stress of SiO
2
film were analyzed in detail. At the same time
the causes and the mechanism of the stress generation as change of the process conditions compared with the stress of SiO
2
film deposited on Si substrate were discussed. Experimental results indicate that the stress of SiO
2
film deposited on GaSb substrate by PECVD is relatively small under the process parameters of deposition temperature of 300℃
RF power of 20 W
cavity pressure of 90 Pa
gas flow ratio of SiH
4
/N
2
O of 125/70 cm
3
min
-1
.
关键词
Keywords
references
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