您当前的位置:
首页 >
文章列表页 >
Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD
更新时间:2020-08-12
    • Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD

    • Chinese Journal of Luminescence   Vol. 39, Issue 7, Pages: 935-941(2018)
    • DOI:10.3788/fgxb20183907.0935    

      CLC: O484
    • Received:21 October 2017

      Revised:28 February 2018

      Published Online:13 March 2018

      Published:05 July 2018

    移动端阅览

  • WANG Zhi-wei, HAO Yong-qin, LI Yang etc. Study of SiO<sub>2</sub> Thin Films Stress Deposited on GaSb Substrate by PECVD[J]. Chinese Journal of Luminescence, 2018,39(7): 935-941 DOI: 10.3788/fgxb20183907.0935.

  •  
  •  

0

Views

165

下载量

3

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Study of SiO2 Dielectric Film Stress Grown by The Method of Ion Assisted Deposition
Advances in Recoverable Mechanoluminescence in Inorganic Materials
Design of High Contrast Grating Mirror with Low Index Grating Layer
Effect of Undoped GaN Layer Thickness on The Wavelength Uniformity of GaN Based Blue LEDs
Effects of Step-graded AlxGa1-xN Buffer on Properties of GaN Films

Related Author

ZHANG Jin-sheng
ZHANG Jin-long
NING Yong-qiang
Jun-cheng ZHANG
Xiao-feng SHI
Shan-shan WANG
Xiao-ming ZHANG
Jian-xiong LEI

Related Institution

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
University of Chinese Academy of Sciences
Department of Physics, Ocean University of China
National Key Laboratory of Science and Technology on High Power Semiconductor Lasers, Changchun University of Science and Technology
Shanxi FeiHong Micro-Nano Photoelectron Science and Technology Co. Ltd.
0