Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD

WANG Zhi-wei; HAO Yong-qin; LI Yang; XIE Jian-lai; WANG Xia; YAN Chang-ling; WEI Zhi-peng

doi:10.3788/fgxb20183907.0935

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Study of SiO₂ Thin Films Stress Deposited on GaSb Substrate by PECVD

更新时间：2020-08-12

- Study of SiO₂ Thin Films Stress Deposited on GaSb Substrate by PECVD
- Chinese Journal of Luminescence Vol. 39, Issue 7, Pages: 935-941(2018)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11474038,61376045,11474036
- DOI：10.3788/fgxb20183907.0935
  CLC： O484
- Received：21 October 2017，
  
  Revised：28 February 2018，
  
  Published Online：13 March 2018，
  
  Published：05 July 2018
- 稿件说明：
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王志伟, 郝永芹, 李洋等. GaSb基PECVD法制备SiO2薄膜的应力研究[J]. 发光学报, 2018,39(7): 935-941

WANG Zhi-wei, HAO Yong-qin, LI Yang etc. Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD[J]. Chinese Journal of Luminescence, 2018,39(7): 935-941
王志伟, 郝永芹, 李洋等. GaSb基PECVD法制备SiO2薄膜的应力研究[J]. 发光学报, 2018,39(7): 935-941 DOI： 10.3788/fgxb20183907.0935.

WANG Zhi-wei, HAO Yong-qin, LI Yang etc. Study of SiO2 Thin Films Stress Deposited on GaSb Substrate by PECVD[J]. Chinese Journal of Luminescence, 2018,39(7): 935-941 DOI： 10.3788/fgxb20183907.0935.

摘要

为了实现在GaSb衬底上获得低应力的SiO

薄膜，研究了等离子体增强化学气相沉积法（PECVD）在晶格失配较大的GaSb衬底上沉积SiO

薄膜的应力情况。通过改变薄膜沉积时的工艺条件，如反应温度、射频功率、反应压强、气体流量比，并基于曲率法模型，对镀膜前后的曲率半径进行了实验测量，利用Stoney公式计算相关应力值并绘制应力变化曲线。详细讨论了PECVD工艺条件的改变对SiO

薄膜应力所产生的影响。同时通过在Si衬底上沉积SiO

薄膜，对比分析了导致薄膜应力产生的因素及变化过程。实验结果表明，在沉积温度为300℃、射频功率为20 W、腔体压强为90 Pa、气体流量比SiH

O为125/70 cm

min

-1

的工艺参数下，PECVD法在GaSb衬底上沉积的SiO

薄膜应力相对较小。

Abstract

In order to deposit a low stress SiO

dielectric film on a GaSb substrate

the stress of SiO

film deposited on GaSb substrate with larger lattice mismatch by plasma enhanced chemical vapor deposition(PECVD) was investigated. The SiO

film was experimentally tested based on the curvature model by changing the process parameters of PECVD

such as deposition temperature

RF power

cavity pressure and gas flow ratio. And the stress was calculated by Stoney formula. The effects of these parameters on the stress of SiO

film were analyzed in detail. At the same time

the causes and the mechanism of the stress generation as change of the process conditions compared with the stress of SiO

film deposited on Si substrate were discussed. Experimental results indicate that the stress of SiO

film deposited on GaSb substrate by PECVD is relatively small under the process parameters of deposition temperature of 300℃

RF power of 20 W

cavity pressure of 90 Pa

gas flow ratio of SiH

O of 125/70 cm

min

-1

关键词

Keywords

references

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