Design of High Contrast Grating Mirror with Low Index Grating Layer

XIE Jian-lai; HAO Yong-qin; ZHANG Jia-bin; YAN Chang-ling; MA Xiao-hui; WANG Zhi-wei; WANG

doi:10.3788/fgxb20183906.0855

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Design of High Contrast Grating Mirror with Low Index Grating Layer

更新时间：2020-08-12

- Design of High Contrast Grating Mirror with Low Index Grating Layer
- Chinese Journal of Luminescence Vol. 39, Issue 6, Pages: 855-861(2018)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11474038,61376045,11474036
- DOI：10.3788/fgxb20183906.0855
  CLC： TN248.4
- Received：30 October 2017，
  
  Revised：13 December 2017，
  
  Published Online：18 January 2018，
  
  Published：05 June 2018
- 稿件说明：
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谢检来, 郝永芹, 张家斌等. 一种具有低折射率的高对比度光栅反射镜的设计[J]. 发光学报, 2018,39(6): 855-861

XIE Jian-lai, HAO Yong-qin, ZHANG Jia-bin etc. Design of High Contrast Grating Mirror with Low Index Grating Layer[J]. Chinese Journal of Luminescence, 2018,39(6): 855-861
谢检来, 郝永芹, 张家斌等. 一种具有低折射率的高对比度光栅反射镜的设计[J]. 发光学报, 2018,39(6): 855-861 DOI： 10.3788/fgxb20183906.0855.

XIE Jian-lai, HAO Yong-qin, ZHANG Jia-bin etc. Design of High Contrast Grating Mirror with Low Index Grating Layer[J]. Chinese Journal of Luminescence, 2018,39(6): 855-861 DOI： 10.3788/fgxb20183906.0855.

摘要

设计并研究了一种工作于2 m波段的GaSb基亚波长高对比度光栅反射镜，其具有低折射率光栅层结构。通过严格耦合波理论优化结构，以最大限度地满足VCSEL腔面反射镜对反射率带宽的要求。反射镜对2 m波段的TM模式具有优良的反射效率，带宽与设计波长之比达15%（反射率

99%），在反射率

99.9%的部分

9.5%，带宽中心波长为2.003 m，与此同时TE模的反射率不超过70.20%。该反射镜结构中几个参数的制作容差较大，且厚度低于1.1 m，有利于在垂直腔面发射半导体激光器上的单片集成。

Abstract

A 2 m subwavelength high contrast grating(HCG) mirror based on GaSb was designed and investigated

which had a low index grating layer structure. These designs of structure were optimized by use of rigorous coupled wave theory to maximize the reflectivity and bandwidth to meet the requirements of a VCSEL cavity mirror. The mirror has excellent reflectivity for TM mode of the 2 m wave band. The ratio of bandwidth to design wavelength is 15%(reflectivity

99%). When the reflectivity

99.9%

9.5%

and the bandwidth center wavelength is 2.003 m. At the same time

the reflectivity of TE mode does not exceed 70.20%. Several parameters in the mirror structure have larger fabrication tolerances

and the thickness is less than 1.1 m

which is beneficial to the monolithic integration on vertical cavity surface emitting semiconductor lasers.

关键词

Keywords

references

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Related Institution

National Key Lab of High-power Semiconductor Lasers, Changchun University of Science and Technology

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厦门理工学院光电与通信工程学院

福建省光电信息材料与器件重点实验室

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