High Beam Quality In-phase Coupled Vertical Cavity Surface Emitting Laser Array

XU Kun; FU Lin-jie; ZHONG Fa-cheng; DU Yin-xiao; XUN Meng

doi:10.3788/fgxb20183906.0844

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High Beam Quality In-phase Coupled Vertical Cavity Surface Emitting Laser Array

更新时间：2020-08-12

- High Beam Quality In-phase Coupled Vertical Cavity Surface Emitting Laser Array
- Chinese Journal of Luminescence Vol. 39, Issue 6, Pages: 844-849(2018)
- 作者机构：
  
  1. 郑州航空工业管理学院理学院, 河南郑州 450046
  2. 中国科学院微电子研究所, 北京 100029
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Fundation of China(51472221);National Natura
- DOI：10.3788/fgxb20183906.0844
  CLC： TN364+.2
- Received：21 October 2017，
  
  Revised：28 December 2017，
  
  Published Online：25 January 2018，
  
  Published：05 June 2018
- 稿件说明：
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许坤, 付林杰, 钟发成等. 高光束质量垂直腔面发射激光器同相耦合阵列[J]. 发光学报, 2018,39(6): 844-849

XU Kun, FU Lin-jie, ZHONG Fa-cheng etc. High Beam Quality In-phase Coupled Vertical Cavity Surface Emitting Laser Array[J]. Chinese Journal of Luminescence, 2018,39(6): 844-849
许坤, 付林杰, 钟发成等. 高光束质量垂直腔面发射激光器同相耦合阵列[J]. 发光学报, 2018,39(6): 844-849 DOI： 10.3788/fgxb20183906.0844.

XU Kun, FU Lin-jie, ZHONG Fa-cheng etc. High Beam Quality In-phase Coupled Vertical Cavity Surface Emitting Laser Array[J]. Chinese Journal of Luminescence, 2018,39(6): 844-849 DOI： 10.3788/fgxb20183906.0844.

摘要

质子注入型面发射激光器相干耦合阵列能够实现同相模式的激射，但是由于制作过程中的工艺不均匀性引起单元间存在相位差，影响光束的质量。本文通过设计分离电极结构，使每个单元注入的电流得到分别的控制，实现了3单元三角排列阵列高光束质量同相耦合模式的激射。阵列远场发散角仅为3.4，大约有25.6%的全部能量聚集在中心光斑。激射光谱的线宽为0.24 nm，边模抑制比为27 dB。该方法能够有效提高相干耦合阵列的光束质量，弥补制作工艺中引入的单元不均匀性，提高器件的可靠性和实用性。质子注入方法简单、成本低，能够成为制作高光束质量相干耦合阵列的一个重要方法。

Abstract

In-phase mode operation can be obtained from implant-defined vertical cavity surface emitting laser arrays. However

the non-uniformities in the fabrication process induce the relative phase difference

which can impact the beam quality. In this paper

multi contacts were designed to make current injection into each element separately. In-phase mode with high beam quality was achieved in 3-element arrays. The divergence of the array is only 3.4. About 25.6% of total power is concentrated in the central lobe. The line width in the spectrum is 0.24 nm. The side mode suppress ratio(SMSR) is 28 dB. The method can improve the beam quality of coherently coupled arrays effectively. It can also mend the non-uniformity of the elements in fabrication process

improving the reliability and practicability. The method of proton implantation is simple and of low cost

which can be an alternative to fabricate coherently coupled arrays.

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Keywords

references

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