Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

ZHANG Lei; LIU Guo-chao; DONG Cheng-yuan

doi:10.3788/fgxb20183906.0823

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Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

更新时间：2020-08-12

- Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors
- Chinese Journal of Luminescence Vol. 39, Issue 6, Pages: 823-829(2018)
- 作者机构：
  
  上海交通大学电子工程系上海,200240
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61474075)
- DOI：10.3788/fgxb20183906.0823
  CLC： TN321
- Received：13 August 2017，
  
  Revised：16 September 2017，
  
  Published Online：25 January 2018，
  
  Published：05 June 2018
- 稿件说明：
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张磊, 刘国超, 董承远. 非晶铟镓锌氧薄膜晶体管钼/铜源漏电极的研究[J]. 发光学报, 2018,39(6): 823-829

ZHANG Lei, LIU Guo-chao, DONG Cheng-yuan. Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2018,39(6): 823-829
张磊, 刘国超, 董承远. 非晶铟镓锌氧薄膜晶体管钼/铜源漏电极的研究[J]. 发光学报, 2018,39(6): 823-829 DOI： 10.3788/fgxb20183906.0823.

ZHANG Lei, LIU Guo-chao, DONG Cheng-yuan. Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors[J]. Chinese Journal of Luminescence, 2018,39(6): 823-829 DOI： 10.3788/fgxb20183906.0823.

摘要

针对非晶铟镓锌氧薄膜晶体管（a-IGZO TFT）的钼/铜源漏电极开展研究。实验证明，单层Mo源漏电极与栅绝缘层之间的粘附性好、表面粗糙度较小、电阻率较大，而单层Cu源漏电极与栅绝缘层之间的结合性差且Cu原子扩散问题严重、表面粗糙度较大、电阻率较小。为了实现优势互补，我们设计了双层Mo（20 nm）/Cu（80 nm）源漏电极，并采用优化工艺制备了包含该电极结构的a-IGZO TFT。器件具有良好的电学特性，场效应迁移率为 8.33 cm

-1

，阈值电压为6.0 V，亚阈值摆幅为2.0 V/dec，开关比为 1.310

，证明了双层Mo/Cu源漏电极的可行性和实用性。

Abstract

Mo/Cu source/drain(S/D) electrodes for amorphous InGaZnO thin film transistors(a-IGZO TFTs) were investigated. The experimental data indicate that the single-layer Mo electrodes have good adhesion to gate insulators

smaller surface roughness

and higher resistivity

whereas the single-layer Cu electrodes possess bad adhesion to gate insulators as well as the serious Cu atom diffusion problems

larger surface roughness

and lower resistivity. To complement each other's advantages

the double-layer Mo/Cu electrodes as well as the corresponding a-IGZO TFTs are designed and fabricated

which exhibits good performance parameters(field effect mobility of 8.33 cm

-1

threshold voltage of 6.0 V

subthreshold swing of 2.0 V/dec

and on-off current ratio of 1.310

). This proved the feasibility and practicability of the double-layer Mo/Cu source/drain electrodes for the mass productions of a-IGZO TFTs.

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references

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