Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping

LI Tong; WANG Tie-gang; FAN Qi-xiang; LIU Zhen-zhen; WANG Ya-xin; ZHAO Xin-wei

doi:10.3788/fgxb20183906.0784

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Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping

更新时间：2020-08-12

- Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping
- Chinese Journal of Luminescence Vol. 39, Issue 6, Pages: 784-789(2018)
- 作者机构：
  
  1. 天津职业技术师范大学电子工程学院, 天津 300222
  2. 天津职业技术师范大学机械工程学院, 天津 300222
  3. 东京理科大学物理系, 日本
- 作者简介：
- 基金信息：
  
  Supported by National Science Foundation of China(51301181,51501130);Innovation Te
- DOI：10.3788/fgxb20183906.0784
  CLC： O484.4
- Received：27 September 2017，
  
  Revised：26 February 2018，
  
  Published Online：05 March 2018，
  
  Published：05 June 2018
- 稿件说明：
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李彤, 王铁钢, 范其香等. Na或Cu掺杂对Si/NiO异质结的光电性能影响[J]. 发光学报, 2018,39(6): 784-789

LI Tong, WANG Tie-gang, FAN Qi-xiang etc. Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping[J]. Chinese Journal of Luminescence, 2018,39(6): 784-789
李彤, 王铁钢, 范其香等. Na或Cu掺杂对Si/NiO异质结的光电性能影响[J]. 发光学报, 2018,39(6): 784-789 DOI： 10.3788/fgxb20183906.0784.

LI Tong, WANG Tie-gang, FAN Qi-xiang etc. Optical and Electrical Properties of Si/NiO Heterojunctions with and Without Na or Cu Doping[J]. Chinese Journal of Luminescence, 2018,39(6): 784-789 DOI： 10.3788/fgxb20183906.0784.

摘要

利用磁控溅射方法制备了引入Na或Cu元素前后Si/NiO异质结。实验结果表明，Na元素引入后的Si/NiO：Na异质结的整流特性最佳。此时，Si/NiO：Na异质结光学透过率可以达到70%，这可能是由于Si/NiO：Na异质结的结晶质量较优、薄膜内缺陷少所致。Si/NiO：Na异质结

I-V

曲线的拟合结果显示界面态状态也会影响其整流特性。而Si/NiO和Si/NiO：Cu异质结都没能获得较好的整流特性，可能是薄膜内缺陷增多所致。这一结论得到了XRD、SEM、AFM和UV结果的支持。

Abstract

The Si/NiO heterojunctions with and without Na or Cu doping were prepared by the magnetron sputtering method. The best rectifying characteristics appears in the Si/NiO:Na heterojunction

where the average optical transmittance can reach to 70% in the visible range

which may be explained by the reduced defects due to the improved crystallization. The fitted

I-V

curve of Si/NiO:Na heterojunction indicates that the interface state also affects the rectifying property. Good rectifying property hasn't been observed in Si/NiO and Si/NiO:Cu heterojunctions because of the appearance of more defects. These results are also evidenced by XRD

SEM

AFM and UV results.

关键词

Keywords

references

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State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University

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