Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device

WU Li-fan; MIAO Rui-xia; SHANG Shi-guang

doi:10.3788/fgxb20183905.0687

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Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device

更新时间：2020-08-12

- Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device
- Chinese Journal of Luminescence Vol. 39, Issue 5, Pages: 687-691(2018)
- 作者机构：
  
  西安邮电大学电子工程学院, 陕西西安 710121
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (51302215);Scientific Re
- DOI：10.3788/fgxb20183905.0687
  CLC： TN382;TN305
- Received：05 November 2017，
  
  Revised：13 January 2018，
  
  Published Online：23 March 2018，
  
  Published：05 May 2018
- 稿件说明：
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武利翻, 苗瑞霞, 商世广. 高灵敏度Sb基量子阱2DEG的霍尔器件[J]. 发光学报, 2018,39(5): 687-691

WU Li-fan, MIAO Rui-xia, SHANG Shi-guang. Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device[J]. Chinese Journal of Luminescence, 2018,39(5): 687-691
武利翻, 苗瑞霞, 商世广. 高灵敏度Sb基量子阱2DEG的霍尔器件[J]. 发光学报, 2018,39(5): 687-691 DOI： 10.3788/fgxb20183905.0687.

WU Li-fan, MIAO Rui-xia, SHANG Shi-guang. Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device[J]. Chinese Journal of Luminescence, 2018,39(5): 687-691 DOI： 10.3788/fgxb20183905.0687.

摘要

用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双掺杂构成的Hall器件的新结构，有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比，室温下器件电子迁移率从15 000 cm

-1

提高到16 000 cm

-1

。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试，结果显示器件不同温度范围有不同散射机构。双掺杂结构形成高灵敏度、高二维电子气（2DEG）浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。

Abstract

The highly sensitive Hall device made of InAs/AlSb quantum-well structures pseudomorphically grown on the GaAs substrate by molecular beam epitaxy has been developed. The advanced InAs/AlSb Hall device includes double -doped layers

which significantly elevate the sheet electron density. Moreover

electron mobility is increased from 15 000 cm

-1

to 16 000 cm

-1

at room temperature

compared with that of an unintentionally doped AlSb/InAs Hall device. AFM measurement results show a smooth surface morphology and high crystalline quality of the samples. The quantum Hall device can be operated in the temperature ranging from 77 K to 300 K. Hall measurements show different scattering mechanism on electron mobility at temperature range. The advanced highly-sensitive InAs/AlSb heterostructure two-dimensional electron gases(2DEG) Hall device including double -doped layers is promising in near future.

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references

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