XU Yi, WU Qing-feng, ZHOU Sheng-jun etc. Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED[J]. Chinese Journal of Luminescence, 2018,39(5): 674-680
XU Yi, WU Qing-feng, ZHOU Sheng-jun etc. Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED[J]. Chinese Journal of Luminescence, 2018,39(5): 674-680 DOI: 10.3788/fgxb20183905.0674.
Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED
The effect of V-shaped pit hole current distributionin GaN based green LED was experimentally and theoretically investigated. First
three LED samples were prepared by experiment
which V-shaped pit area ratio was different. Then
a numerical model was established to match the external quantum efficiency(EQE) and the voltage of the theoretical calculation with the trend of the experimental test
thus the credibility of the numerical model was established. Calculation results show that the V-shaped pit changes the distribution of hole current
the hole current density increases significantly in the V-shaped pit
and reduces significantly at the platform. Further
the analysis shows that the hole current ratio in the V-shaped pit shows a near linear increase with the V-shaped pit area ratio(slope is 2.06) when the V-shaped pit area ratio is in the range of 0-10%
while the V-shaped pit hole injection has not yet dominated the whole hole injection process.
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references
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