Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package

XUE Zheng-qun; WANG Ling-hua; SU Hui

doi:10.3788/fgxb20183904.0534

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Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package

更新时间：2020-08-12

- Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package
- Chinese Journal of Luminescence Vol. 39, Issue 4, Pages: 534-540(2018)
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 中国科学院福建物质结构研究所, 福建福州 350002
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61405198);National High
- DOI：10.3788/fgxb20183904.0534
  CLC： O472;TN248.4
- Received：15 August 2017，
  
  Revised：12 October 2017，
  
  Published Online：03 November 2017，
  
  Published：05 April 2018
- 稿件说明：
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薛正群, 王凌华, 苏辉. 反射式倒装对1 300 nm激光器性能改善的分析[J]. 发光学报, 2018,39(4): 534-540

XUE Zheng-qun, WANG Ling-hua, SU Hui. Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package[J]. Chinese Journal of Luminescence, 2018,39(4): 534-540
薛正群, 王凌华, 苏辉. 反射式倒装对1 300 nm激光器性能改善的分析[J]. 发光学报, 2018,39(4): 534-540 DOI： 10.3788/fgxb20183904.0534.

XUE Zheng-qun, WANG Ling-hua, SU Hui. Analysis The Performance Improvement of 1 300 nm Laser with Reflective Flip Chip Package[J]. Chinese Journal of Luminescence, 2018,39(4): 534-540 DOI： 10.3788/fgxb20183904.0534.

摘要

对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装，在热沉上靠近激光器出光端面约10~20 m的区域采用Au反射层，对器件垂直方向出光进行反射。测试结果显示，与常规封装相比，采用这种结构封装芯片垂直发散角从34.5降低至17，器件单模光纤的平均耦合功率从1 850 W提高至2 326 W，耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量，结果表明：与常规封装器件相比，采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA，饱和输出功率从37 mW提高至42 mW，热阻从194 K/W降低至131 K/W。最后对两种器件在95℃环境温度、100 mA电流下进行加速老化实验，老化结果显示：在老化条件下，器件衰退系数从常规封装的4.2210

-5

降低至1.0610

-5

，寿命从5 283 h提高至21 027 h。

Abstract

AlGaInAs MQWs 1 300 nm FP lasers were packaged p-side down with a reflective submount which had 10-20 m Au film near the facets of laser bare die. Compared to convention package form laser (LD-B)

the divergence angle at FWHM of flip chip (LD-A) with a Au reflector decreases from 34.5 to 17

and the average SMF coupling power increases from 1 850 W to 2 326 W

as the coupling efficiency increases from 21.1% to 26.5%. Compared to LD-B

the saturated current of LD-A increases from 135 mA to 155 mA

the saturated output power increasses from 37 mW to 42 mW

and the thermal resistance decreases from 194 K/W to 131 K/W. Finnaly

the aging experiments are carried out under the condition of 95℃ ambient temperature and 100 mA injection current. Compared to LD-B

the degradation coefficient of LD-A under aging condition decreases from 4.2210

-5

to 1.0610

-5

and the lifetime increases from 5 283 h to 21 027 h.

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Keywords

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