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Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties
更新时间:2020-08-12
    • Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties

    • Chinese Journal of Luminescence   Vol. 39, Issue 3, Pages: 356-362(2018)
    • DOI:10.3788/fgxb20183903.0356    

      CLC: TP394.1;TH691.9
    • Received:11 July 2017

      Revised:19 August 2017

      Published Online:18 September 2017

      Published:05 March 2018

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  • LI Jing-yu, LIN Qing, ZHANG Ting etc. Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties[J]. Chinese Journal of Luminescence, 2018,39(3): 356-362 DOI: 10.3788/fgxb20183903.0356.

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