Evaluation of Packaging Induced Stress of Semiconductor Laser Bar

ZHANG Zhe-ming; BO Bao-xue; ZHANG Xiao-lei; GU Hua-xin; LIU Li-ning; XU Yu-meng; QIAO Zhon

doi:10.3788/fgxb20183903.0343

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Evaluation of Packaging Induced Stress of Semiconductor Laser Bar

更新时间：2020-08-12

- Evaluation of Packaging Induced Stress of Semiconductor Laser Bar
- Chinese Journal of Luminescence Vol. 39, Issue 3, Pages: 343-348(2018)
- 作者机构：
  
  长春理工大学, 高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(SQ2017YFGX020046
- DOI：10.3788/fgxb20183903.0343
  CLC： TN248.4
- Received：05 July 2017，
  
  Revised：19 August 2017，
  
  Published Online：28 August 2017，
  
  Published：05 March 2018
- 稿件说明：
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张哲铭, 薄报学, 张晓磊等. 半导体激光器巴条封装应力及评价[J]. 发光学报, 2018,39(3): 343-348

ZHANG Zhe-ming, BO Bao-xue, ZHANG Xiao-lei etc. Evaluation of Packaging Induced Stress of Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2018,39(3): 343-348
张哲铭, 薄报学, 张晓磊等. 半导体激光器巴条封装应力及评价[J]. 发光学报, 2018,39(3): 343-348 DOI： 10.3788/fgxb20183903.0343.

ZHANG Zhe-ming, BO Bao-xue, ZHANG Xiao-lei etc. Evaluation of Packaging Induced Stress of Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2018,39(3): 343-348 DOI： 10.3788/fgxb20183903.0343.

摘要

为了快捷而有效地检测半导体激光器的封装应力，设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数，并利用有限元软件模拟，通过半导体能带与应力理论，说明偏振度与封装应力的影响关系。实验表明，巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算，封装应力为141.92 MPa，偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度，可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。

Abstract

In order to detect the packaging induced stress of semiconductor lasers quickly and effectively

an experimental device which can reveal the encapsulation stress by detecting the polarization degree of each unit of laser bar was designed. The parameters of the semiconductor laser bar were experimentally tested and the finite element software was used to simulate the relationship between the degree of polarization and the packaging induced stress through the theory of the semiconductor energy band and stress. The experiment results show that the individual light-emitting unit of the bar is less polarized

the higher threshold current is due to the larger packaging stress. Through the calculation

the packing stress is 141.92 MPa

and the polarization equivalent stress is 26.73 MPa. The degree of polarization of the device below the threshold reflects the distribution trend of the packaging induced stress

and the degree of polarization of the device can be measured by using the following threshold current. It can provide a quicker and more efficient method for selecting the heat sink and the solder material and the improvement of the welding process parameters.

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references

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