Highly Efficient N-doped Organic Light-emitting Devices

YU Yao-yao; YU Ye; LIN Wen-yan; WU Zhi-jun; LIN Wei

doi:10.3788/fgxb20183903.0315

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Highly Efficient N-doped Organic Light-emitting Devices

更新时间：2020-08-12

- Highly Efficient N-doped Organic Light-emitting Devices
- Chinese Journal of Luminescence Vol. 39, Issue 3, Pages: 315-321(2018)
- 作者机构：
  
  华侨大学信息科学与工程学院, 福建厦门 361021
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61404053)
- DOI：10.3788/fgxb20183903.0315
  CLC： TN383+.1;TN312+.8
- Received：19 July 2017，
  
  Revised：08 October 2017，
  
  Published Online：25 October 2017，
  
  Published：05 March 2018
- 稿件说明：
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于瑶瑶, 喻叶, 林雯嫣等. 高效率N掺杂有机电致发光器件的研制[J]. 发光学报, 2018,39(3): 315-321

YU Yao-yao, YU Ye, LIN Wen-yan etc. Highly Efficient N-doped Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2018,39(3): 315-321
于瑶瑶, 喻叶, 林雯嫣等. 高效率N掺杂有机电致发光器件的研制[J]. 发光学报, 2018,39(3): 315-321 DOI： 10.3788/fgxb20183903.0315.

YU Yao-yao, YU Ye, LIN Wen-yan etc. Highly Efficient N-doped Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2018,39(3): 315-321 DOI： 10.3788/fgxb20183903.0315.

摘要

为了改善有机电致发光器件的性能，利用CsN

作为N掺杂剂，以B3PYPPM为电子传输材料，制备了基于绿色磷光材料Ir（ppy）

的高效率有机电致发光器件。针对不同N掺杂浓度和掺杂厚度的器件进行研究，最终得到最佳N掺杂器件B，器件结构为ITO/HAT-CN（5 nm）/TAPC（70 nm）/TCTA∶Ir（ppy）

（15%，20 nm）/B3PYPPM（17 nm）/B3PYPPM∶CsN

（10%，63 nm）/Al。实验结果表明，浓度与厚度适当的N掺杂器件能有效提高器件的电流效率和功率效率。CsN

作为一种高效的N掺杂剂，与电子传输材料B3PYPPM掺杂后，有效地降低了电子的注入势垒，增加了电子注入，提高了电子迁移率，改善了电子的注入和传输能力，使载流子更加平衡，从而降低了器件的开启电压和驱动电压，有效地提高了电流效率和功率效率。最佳N掺杂器件B开启电压仅为2.1 V，最大电流效率和功率效率分别为67.0 cd/A、91.1 lm/W。值得注意的是，在1 000 cd/m

亮度下，最佳N掺杂器件B的功率效率仍能达到80.1 lm/W。

Abstract

For the purpose of improving the performance of organic light-emitting device (OLED)

the green phosphorescent OLED was fabricated using Ir(ppy)

as emitter and CsN

as N-dopant doped in B3PYPPM which functioned as electron-transporting layer (ETL). The N-doped device with best performance named device B comprising ITO/HAT-CN(5 nm)/TAPC(70 nm)/TCTA:Ir(ppy)

(15%

20 nm)/B3PYPPM(17 nm)/B3PYPPM:CsN

(10%

63 nm)/Al was achieved by optimizing the doping concentration and the thickness of N-doped ETL. The results indicate that employing the N-doped ETL possessing proper doping concentration as well as thickness can enhance current efficiency and power efficiency dramatically. Served effectively as N-dopant in B3PYPPM

CsN

reduces the injection barrier for electron

enhances the electron conductivity

facilitates the electron injection and transportation and enhances the charge balance

leading to the decrease in turn on and operating voltages as well as improvement on current efficiency and power efficiency. The optimized N-doped device B shows rather low turn-on voltage with the value of 2.1 V

and the maximum efficiencies are 67.0 cd/A and 91.1 lm/W respectively. It is worthwhile to point out power efficiency of device B can also reach 80.1 lm/W at high luminance of 1 000 cd/m

关键词

Keywords

references

OHISA S, PU Y J, KIDO J J. Poly (pyridinium iodide ionic liquid)-based electron injection layers for solution-processed organic light-emitting devices[J]. J. Mater. Chem. C, 2016, 4(28):6713-6719.

祖洁, 陈平, 盛任, 等. 高效率的蓝色磷光有机电致发光器件[J]. 发光学报, 2017, 38(4):487-491. ZU J, CHEN P, SHENG R, et al.. Highly efficient blue organic light-emitting diodes[J]. Chin. J. Lumin., 2017, 38(4):487-491. (in Chinese)

马东阁. OLED显示与照明从基础研究到未来的应用[J]. 液晶与显示, 2016, 31(3):229-241. MA D G. OLED display and lighting-from basic research to future applications[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(3):229-241. (in Chinese)

陈星明, 胡胜坤, 金玉, 等. 不同发光染料的顶发射有机电致发光器件的研制[J]. 发光学报, 2016, 37(4):446-451. CHEN X M, HU S K, JIN Y, et al.. Top-emitting organic light-emitting devices with different luminescent dyes[J]. Chin. J. Lumin., 2016, 37(4):446-451. (in Chinese)

于瑶瑶, 陈星明, 金玉, 等. 利用CsN3n型掺杂电子传输层改善OLED器件性能的研究[J]. 液晶与显示, 2016,31(8):773-777. YU Y Y, CHEN X M, JIN Y, et al.. Improved properties of organic light -emitting devices by utilizing CsN3 n-type doped electron transport layer[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(8):773-777. (in Chinese)

XIANG C Y, KOO W, SO F, et al.. A systematic study on efficiency enhancements in phosphorescent green, red and blue microcavity organic light emitting devices[J]. Light:Sci. Appl., 2013, 2(6):e74.

DING L, SUN Y Q, CHEN H, et al.. A novel intermediate connector with improved charge generation and separation for large-area tandem white organic lighting devices[J]. J. Mater. Chem. C, 2014, 2(48):10403-10408.

SUN H D, GUO Q G, YANG D Z, et al.. High efficiency tandem organic light emitting diode using an organic heterojunction as the charge generation layer:an investigation into the charge generation model and device performance[J]. ACS Photon., 2015, 2(2):271-279.

BIN Z Y, DUAN L, QIU Y. Air stable organic salt as an n-type dopant for efficient and stable organic light-emitting diodes[J]. ACS Appl. Mater. Interf., 2015, 7(12):6444-6450.

YAO L, LI L, QIN L X, et al.. Efficient small molecular organic light emitting diode with graphene cathode covered by a Sm layer with nano-hollows and n-doped by Bphen:Cs2CO3 in the hollows[J]. Nanotechnology, 2017, 28(10):105201.

QIN D S, WANG M X, CHEN Y H, et al.. The charge generation layer incorporating two p-doped hole transport layers for improving the performance of tandem organic light emitting diodes[J]. Eur. Phys. J.-Appl. Phys., 2014, 67(3):423-429.

LU C Y, JIAO M, LEE W K, et al.. Achieving above 60% external quantum efficiency in organic light-emitting devices using ITO-free low-index transparent electrode and emitters with preferential horizontal emitting dipoles[J]. Adv. Funct. Mater., 2016, 26(19):3250-3258.

SHEN L Y, WU X M, HUA Y L, et al.. Improving the efficiency of blue organic light-emitting diodes by employing Cs-derivatives as the n-dopant[J]. Acta Phys.-Chim. Sinica, 2012, 28(6):1497-1501.

YU Y Y, CHEN X M, JIN Y, et al.. Electron-transporting layer doped with Cesium azide for high performance phosphorescent and tandem white organic light-emitting devices[J]. J. Phys. D:Appl. Phys., 2017, 50(27):275104.

KAO P C, CHIU C T. MoO3 as p-type dopant for Alq3-based p-i-n homojunction organic light-emitting diodes[J]. Org. Electron., 2015, 26:443-450.

SUN H D, CHEN Y H, CHEN J S, et al.. Interconnectors in tandem organic light emitting diodes and their influence on device performance[J]. IEEE J. Select. Top. Quant. Electron., 2016, 22(1):154-163.

CHU X B, GUAN M, NIU L T, et al.. The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED[J]. Phys. Stat. Sol.(a), 2014, 211(7):1605-1609.

YOOK K S, JEON S O, MIN S Y, et al.. Highly efficient p-i-n and tandem organic light-emitting devices using an air-stable and low-temperature-evaporable metal azide as an n-dopant[J]. Adv. Funct. Mater., 2010, 20(11):1797-1802.

DENG Y H, LI Y Q, OU Q D, et al.. The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes[J]. Org. Electron., 2014, 15(6):1215-1221.

LIU M, SU S J, JUNG M C, et al.. Hybrid heterocycle-containing electron-transport materials synthesized by regioselective Suzuki cross-coupling reactions for highly efficient phosphorescent OLEDs with unprecedented low operating voltage[J]. Chem. Mater., 2012, 24(20):3817-3827.

YANG J P, XIAO Y, DENG Y H, et al.. Electric-field-assisted charge generation and separation process in transition metal oxide-based interconnectors for tandem organic light-emitting diodes[J]. Adv. Funct. Mater., 2012, 22(3):600-608.

LUO Y C, AZIZ H. Probing triplet-triplet annihilation zone and determining triplet exciton diffusion length by using delayed electroluminescence[J]. J. Appl. Phys., 2010, 107(9):094510.

EOM S H, ZHENG Y, WRZESNIEWSKI E, et al.. Effect of electron injection and transport materials on efficiency of deep-blue phosphorescent organic light-emitting devices[J]. Org. Electron., 2009, 10(4):686-691.

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