ZHENG Sheng-hui, LIU Ya-nan, LI Yue-chan etc. Effect of Doping Sm<sup>3+</sup> on Long Afterglow Properties of SrLaGa<sub>3</sub>O<sub>7</sub>[J]. Chinese Journal of Luminescence, 2018,39(3): 287-292
ZHENG Sheng-hui, LIU Ya-nan, LI Yue-chan etc. Effect of Doping Sm<sup>3+</sup> on Long Afterglow Properties of SrLaGa<sub>3</sub>O<sub>7</sub>[J]. Chinese Journal of Luminescence, 2018,39(3): 287-292 DOI: 10.3788/fgxb20183903.0287.
Effect of Doping Sm3+ on Long Afterglow Properties of SrLaGa3O7
were prepared by solid state reaction. The crystal structure and luminescent properties of the samples were studied
via
XRD
photoluminescent (PL) and thermoluminescent (ThL) spectra. Furthermore
the effect of doping Sm
3+
on long afterglow properties of SrLaGa
3
O
7
:
x
Sm
3+
was detailedly investigated. The obtained results show that SrLaGa
3
O
7
exhibites long afterglow emission located at 386 nm after the excitation of 254 nm UV light
which can persist more than 60 min. The existence of vacancies in SrLaGa
3
O
7
is responsible for the long afterglow emission. Following the increase of doping Sm
3+
content
the luminescent and afterglow intensity increases and arrives at the strongest values and then decreases. In addition
the luminescent and afterglow emission wavelength shifts towards longer wavelength. When the doping Sm
3+
mole fraction reaches 0.5%
SrLaGa
3
O
7
possesses the best long afterglow properties. The thermoluminescence spectra results indicate that the doping Sm
3+
can result in two different traps
which are created by V
O
and V
Sr
vacancies. These traps affect not only the PL intensities but also the afterglow properties.
关键词
Keywords
references
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