Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor

ZHONG Yun-xiao; ZHOU Shang-xiong; YAO Ri-hui; CAI Wei; ZHU Zhen-nan; WEI Jing-lin; XU Hai-

doi:10.3788/fgxb20183902.0214

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Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor

更新时间：2020-08-12

- Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor
- Chinese Journal of Luminescence Vol. 39, Issue 2, Pages: 214-219(2018)
- 作者机构：
  
  1. 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 华南理工大学材料科学与工程学院, 广东广州 510640
  2. 华南农业大学电子工程学院,广东广州,510642
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20183902.0214
  CLC： TN321+.5
- Received：12 June 2017，
  
  Revised：17 August 2017，
  
  Published Online：21 August 2017，
  
  Published：05 February 2018
- 稿件说明：
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钟云肖, 周尚雄, 姚日晖等. 旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用[J]. 发光学报, 2018,39(2): 214-219

ZHONG Yun-xiao, ZHOU Shang-xiong, YAO Ri-hui etc. Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor[J]. Chinese Journal of Luminescence, 2018,39(2): 214-219
钟云肖, 周尚雄, 姚日晖等. 旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用[J]. 发光学报, 2018,39(2): 214-219 DOI： 10.3788/fgxb20183902.0214.

ZHONG Yun-xiao, ZHOU Shang-xiong, YAO Ri-hui etc. Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor[J]. Chinese Journal of Luminescence, 2018,39(2): 214-219 DOI： 10.3788/fgxb20183902.0214.

摘要

采用旋涂法制备了氧化锆介质层薄膜，重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆，另一方面促使氧化锆薄膜结晶。此外，转速较高时，其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时，制备的绝缘层厚度具有良好的厚度均匀性，粗糙度为0.7 nm，漏电流为3.1310

-5

A/cm

（电场强度1 MV/cm）。最终，利用ZrO

薄膜作为栅极绝缘层，在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT），其迁移率为6.5 cm

/（Vs），开关比为210

。

Abstract

The zirconia dielectric film was prepared by spin coating

and the effect of spin coating speed and annealing temperature on the properties of the film was discussed. The post-high temperature annealing

on the one hand

can cause the zirconia hydrate to dehydrate to form zirconia

and on the other hand

crystallize the zirconia film. In addition

when the speed is high enough

the change has no significant effect on the thickness and roughness of the film. When the spin coating speed is 5 000 r/min and the annealing temperature is 300℃

the prepared insulating layer has good thickness uniformity

with a roughness of 0.7 nm

and the leakage current density is 3.1310

-5

A/cm

at electric fields of 1 MV/cm. Thin film transistor (IGZO-TFT) was prepared on a glass substrate using ZrO

thin film as gate insulating layer. The mobility is 6.5 cm

/(Vs) and the on-to-off current ratio is 210

关键词

Keywords

references

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