Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes

YANG Jie; ZHU Shao-xin; YAN Jian-chang; LI Jin-min; WANG Jun-xi

doi:10.3788/fgxb20183902.0202

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Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes

更新时间：2020-08-12

- Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes
- Chinese Journal of Luminescence Vol. 39, Issue 2, Pages: 202-207(2018)
- 作者机构：
  
  1. 中国科学院大学材料科学与光电技术学院北京,100049
  2. 中国科学院半导体研究所半导体照明研发中心, 北京 100083
  3. 中国电子信息产业发展研究院集成电路研究所北京,100846
- 作者简介：
- 基金信息：
  
  Supported by Beijing Municipal Science and Technology Commission(Z161100002116037)
- DOI：10.3788/fgxb20183902.0202
  CLC： O47
- Received：01 June 2017，
  
  Revised：14 September 2017，
  
  Published：05 February 2018
- 稿件说明：
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杨杰, 朱邵歆, 闫建昌等. 载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响[J]. 发光学报, 2018,39(2): 202-207

YANG Jie, ZHU Shao-xin, YAN Jian-chang etc. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2018,39(2): 202-207
杨杰, 朱邵歆, 闫建昌等. 载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响[J]. 发光学报, 2018,39(2): 202-207 DOI： 10.3788/fgxb20183902.0202.

YANG Jie, ZHU Shao-xin, YAN Jian-chang etc. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes[J]. Chinese Journal of Luminescence, 2018,39(2): 202-207 DOI： 10.3788/fgxb20183902.0202.

摘要

通过设计InGaN多量子阱LED有源区的不同结构，研究了载流子复合机制对LED调制速度的影响。结果显示，由于窄量子阱LED的载流子空间波函数重叠几率更高，且电子泄露效应更显著，所以复合速率更快，调制带宽更高。In组分为1%的InGaN量子垒LED可提高辐射复合的权重，使得调制带宽高于GaN量子垒LED；In组分为5%时，电子泄露和俄歇复合占据主导地位，且由于这两种复合机制复合速率很快，所以调制带宽显著提高。

Abstract

The effect of carrier recombination mechanism on modulation bandwidth of InGaN MQWs LED was investigated with varying MQWs structures. LED with narrow well has a faster modulation speed because of high radiative recombination rate and carrier leakage. LED sample using InGaN barrier with 1% In content has a higher modulation bandwidth than LED with GaN barrier for the reason of higher radiative recombination rate. While in the case of 5% In content

carrier leakage dominates all the recombination mechanisms and crystal defect related SRH and Auger recombination are also severe. In addition

the rate of SRH and Auger recombination is very high

which leads to fast modulation speed.

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