Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses

ZHANG Jian-hua; CHEN Zhang-fu; XU Xiao-xue; CAO Jin; YANG Lian-qiao

doi:10.3788/fgxb20183902.0169

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Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses

更新时间：2020-08-12

- Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses
- Chinese Journal of Luminescence Vol. 39, Issue 2, Pages: 169-174(2018)
- 作者机构：
  
  上海大学机电工程与自动化学院新型显示及集成应用教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (51505270);Science and T
- DOI：10.3788/fgxb20183902.0169
  CLC： TN306;TN383+.1
- Received：15 May 2017，
  
  Revised：07 September 2017，
  
  Published Online：11 September 2017，
  
  Published：05 February 2018
- 稿件说明：
移动端阅览
张建华, 陈章福, 徐小雪等. 人体静电放电对有机发光二极管的影响[J]. 发光学报, 2018,39(2): 169-174

ZHANG Jian-hua, CHEN Zhang-fu, XU Xiao-xue etc. Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses[J]. Chinese Journal of Luminescence, 2018,39(2): 169-174
张建华, 陈章福, 徐小雪等. 人体静电放电对有机发光二极管的影响[J]. 发光学报, 2018,39(2): 169-174 DOI： 10.3788/fgxb20183902.0169.

ZHANG Jian-hua, CHEN Zhang-fu, XU Xiao-xue etc. Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses[J]. Chinese Journal of Luminescence, 2018,39(2): 169-174 DOI： 10.3788/fgxb20183902.0169.

摘要

研究了静电放电（ESD）人体模式（HBM）下的脉冲应力对有机发光二极管（OLED）的性能及寿命的影响，并讨论了相应的物理机制。对比分析了4组OLED在施加ESD放电为0，200，800，1 600 V前后的电学和光学特性，并进行了相应的寿命测试分析。研究发现，OLED器件的光谱对ESD不敏感，随着冲击电压的增大，由于静电打击对载流子的短期抑制效应，OLED的亮度出现轻微下降。在静电冲击电压为200 V和800 V时，伏安特性没有发生变化；当静电冲击电压增至1 600 V时，反向漏电有明显增加。后续的加速寿命实验表明，静电打击对器件的工作寿命没有明显的规律性影响，但是会一定程度提高非本质老化失效的概率。

Abstract

The electro-static discharge (ESD) performance of the organic light emitting diodes was investigated experimentally at the human body model equivalent pulses by utilizing the transmission line pulsing (TLP) tester. ESD with 200

800

1 600 V was applied on four groups OLEDs. The electrical and optical characteristics of OLEDs were analyzed before and after ESD stress. The lifetime tests were carried out for the fresh samples and the devices undergoing ESD stresses. The experiment results show that the electro-luminescence spectra of OLEDs are insensitive to ESD. Because of the short term inhibition effect of ESD on the carriers

the luminance of OLEDs decreases slightly with the increasing of the strike voltage. When the strike voltages are 200 and 800 V

I-V

characteristics of OLEDs don't change. When the strike voltage is 1 600 V

the leakage current increases obviously. The accelerated life test results show that ESD has no obvious regular influence on the life of OLEDs

but it will increase the probability of non essential aging failure to a certain extent.

关键词

Keywords

references

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