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1. 中国科学院大学, 北京 100049
2. 中国科学院半导体研究所 光电子器件国家工程研究中心 北京,100083
Received:05 May 2017,
Revised:13 August 2017,
Published:05 December 2017
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王鑫, 赵懿昊, 王翠鸾等. 110 W高功率高亮度915 nm半导体激光器光纤耦合模块研究[J]. 发光学报, 2017,38(12): 1654-1660
WANG Xin, ZHAO Yi-hao, WANG Cui-luan etc. 110 W High Power and High Brightness 915 nm Fiber Coupled Laser Diode Module[J]. Chinese Journal of Luminescence, 2017,38(12): 1654-1660
王鑫, 赵懿昊, 王翠鸾等. 110 W高功率高亮度915 nm半导体激光器光纤耦合模块研究[J]. 发光学报, 2017,38(12): 1654-1660 DOI: 10.3788/fgxb20173812.1654.
WANG Xin, ZHAO Yi-hao, WANG Cui-luan etc. 110 W High Power and High Brightness 915 nm Fiber Coupled Laser Diode Module[J]. Chinese Journal of Luminescence, 2017,38(12): 1654-1660 DOI: 10.3788/fgxb20173812.1654.
利用空间合束技术和光纤耦合技术将9只波长为915 nm单管芯半导体激光器高效率耦合进光纤中,制备出具有高功率、高亮度输出光纤耦合模块。应用ZEMAX光学软件进行模拟仿真后通过实验验证,光纤耦合模块可以通过芯径105 m、数值孔径0.22的光纤输出大于110 W的功率,并且亮度达到8.64 MW/(cm
2
sr)。
Base on multiple single emitters using spatial beam combining as well as fiber coupling techniques
a high-power and high-brightness fiber-coupled laser-diode module with 9 single semiconductor laser emitters at 915 nm inside was fabricated. It was demonstrated both by ZEMAX software simulation and experiment. The module can produce more than 110 W output power from an optical fiber with core diameter of 105 m and numerical aperture (NA) of 0.22 with equalizing brightness of 8.64 MW/(cm
2
sr). The compactness
higher efficiency
and lower cost production of the diode are available through this technique
and much wider applications of fiber-coupled laser-diodes are anticipated.
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YU J H, GUO L N, WU H L, et al.. High brightness laser-diode device emitting 160 watts from a 100m/NA 0.22 fiber[J]. Appl. Opt., 2015, 54:9385-9389.
王鑫, 王翠鸾, 吴霞, 等.GaAs基高功率半导体激光器单管耦合研究[J]. 发光学报, 2015, 36(8):1018-1021. WANG X, WANG C L, WU X, et al.. Research of high power single GaAs based semiconductor laser[J]. Chin. J. Lumin., 2015, 36(8):1018-1021. (in Chinese)
KARLSEN S R, PRICE R K, REYNOLDS M, et al.. 100-W, 105-m, 0.15 NA fiber coupled laser diode module[J]. SPIE, 2009, 7198:71980T.
NI Y X, MA X Y, JING H Q, et al.. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. J. Semicond., 2016, 37(6):064005-1-5.
JING H Q, ZHONG L, NI Y X, et al.. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. J. Semicond., 2015, 36(10):102006-1
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