High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure

WU Li-fan; MIAO Rui-xia; LI Yong-feng; YANG Xiao-feng

doi:10.3788/fgxb20173812.1650

您当前的位置：

首页 >

文章列表页 >

High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure

更新时间：2020-08-12

- High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure
- Chinese Journal of Luminescence Vol. 38, Issue 12, Pages: 1650-1653(2017)
- 作者机构：
  
  西安邮电大学电子工程学院, 陕西西安 710121
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (51302215);Scientific Re
- DOI：10.3788/fgxb20173812.1650
  CLC： TN382;TN305
- Received：05 May 2017，
  
  Revised：30 September 2017，
  
  Published：05 December 2017
- 稿件说明：
移动端阅览
武利翻, 苗瑞霞, 李永峰等. 高灵敏度InAs/AlSb量子阱的霍尔器件[J]. 发光学报, 2017,38(12): 1650-1653

WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653
武利翻, 苗瑞霞, 李永峰等. 高灵敏度InAs/AlSb量子阱的霍尔器件[J]. 发光学报, 2017,38(12): 1650-1653 DOI： 10.3788/fgxb20173812.1650.

WU Li-fan, MIAO Rui-xia, LI Yong-feng etc. High Sensitivity Hall Devices with AlSb/InAs Quantum Well Structure[J]. Chinese Journal of Luminescence, 2017,38(12): 1650-1653 DOI： 10.3788/fgxb20173812.1650.

摘要

用分子束外延在GaAs（001）衬底上生长了两个量子阱结构的霍尔器件，一个是没有掺杂的量子阱结构，一个是Si-掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明，在300 K下，Si-掺杂的量子阱结构的电子迁移率高达25 000 cm

-1

，并且该器件输入电阻和输出电阻较低。同时，Si-掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。

Abstract

An unintentionally doped AlSb/InAs quantum well (QW) structure and a Si- doped quantum well structure on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). The dependence of sheet electron density and electron mobility on the measurement temperature were investigated. It is found that electron mobility as high as 25 000 cm

-1

has been achieved for 300 K in the Si- doped quantum well structure. The Hall devices with high sensitivity and good temperature stability were fabricated based on the Si- doped AlSb/InAs quantum well structures. Their sensitivity is markedly superior to Hall devices of an unintentionally doped AlSb/InAs quantum well.

关键词

Keywords

references

ZHANG Y, ZHANG Y W, WANG C Y, et al.. High sensitivity Hall devices with AlSb/InAs quantum well structures[J]. Chin. Phys. B, 2013, 22(5):057106-1-3.

DINGLE R, STORMER H L, GOSSARD A C, et al.. Electron mobilities in modulation-doped semiconductor heterojunction superlattices[J]. Appl. Phys. Lett., 1978, 33(7):665-667.

BENNETT B R, MAGNO R, BOOS J B, et al.. Antimonide-based compound semiconductors for electronic devices:a review[J]. Solid-State Electronics, 2005, 49(12):1875-1895.

TUTTLE G, KROEMER H, ENGLISH J H. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells:evidence for antisite donors at the InAs/AlSb interface[J]. J. Appl. Phys., 1990, 67(6):3032-3040.

朱彦旭, 王岳华, 宋会会, 等. 基于GaN基HEMT结构的传感器件研究进展[J].发光学报, 2016, 37(12):1545-1553. ZHU Y X, WANG Y H, SONG H H, et al.. Progress of sensor elements based on GaN HEMT structure[J]. Chin. J. Lumin., 2016, 37(12):1545-1553. (in Chinese)

WU L F, ZHANG Y M, LV H L, et al.. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs:a comparative study of interfacial and electrical characteristics[J]. Chin. Phys. B, 2016, 25(10):108101-1-5.

MAHER H, BOLOG C R, PINER E L. High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer[J]. IEEE Electron Dev. Lett., 1998, 19(3):83-85.

WANG J, XING J L, WEI X, et al.. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy[J]. Appl. Phys. Lett., 2014, 104(5):052111-1-5.

TANG J S, YU G Q, WANG C Y, et al.. Versatile fabrication of self-aligned nanoscale Hall devices using nanowire masks[J]. Nano Lett., 2016, 16(5):3109-3115.

WANG K, HUANG Y, QIU Y Z, et al.. Magnetic properties of ultrathin CO/Pt multilayer Hall devices irradiated using focused ion beam[J]. Physica B: Condensed Matter, 2015, 476(1):158-160.

CHEN D, ZHAO B Q, ZHANG X. High signal-to-noise ratio Hall devices with a 2D structure of dual -doped GaAs/AlGaAs for low field magnetometry[J]. Chin. Phys. Lett., 2015, 32(12):128502-128506.

Views

115

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device

Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition

Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping

Research Progresses on Infrared Superluminescent Diodes

Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices

Related Author

SHANG Shi-guang

SHAN Rui

ZHOU Hai-chun

HAO Rui-ting

OU Quan-hong

GUO Jie

HUO Da-yun

SHI Zhen-wu

Related Institution

Yunnan Key Laboratory for Opti-electronic Information Technology

College of Physics and Electronic, Yunnan Normal University

School of Optoelectronics Information Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University

Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University

Beijing National Laboratory of Condensed Matter, Institue of Physics, Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰