Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector

AN Tao; TU Chuan-bao; YANG Sheng; WU Jun-yu

doi:10.3788/fgxb20173812.1643

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Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector

更新时间：2020-08-12

- Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector
- Chinese Journal of Luminescence Vol. 38, Issue 12, Pages: 1643-1649(2017)
- 作者机构：
  
  西安理工大学, 陕西西安 710048
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173812.1643
  CLC： TN304.2
- Received：02 May 2017，
  
  Revised：30 September 2017，
  
  Published Online：11 September 2017，
  
  Published：05 December 2017
- 稿件说明：
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安涛, 涂传宝, 杨圣等. 基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性[J]. 发光学报, 2017,38(12): 1643-1649

AN Tao, TU Chuan-bao, YANG Sheng etc. Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector[J]. Chinese Journal of Luminescence, 2017,38(12): 1643-1649
安涛, 涂传宝, 杨圣等. 基于PBDT-TT-F:PCBM体异质结红光探测器的光电特性[J]. 发光学报, 2017,38(12): 1643-1649 DOI： 10.3788/fgxb20173812.1643.

AN Tao, TU Chuan-bao, YANG Sheng etc. Photovoltaic Characteristics of PBDT-TT-F:PCBM Based Bulk Heterojunction Red Detector[J]. Chinese Journal of Luminescence, 2017,38(12): 1643-1649 DOI： 10.3788/fgxb20173812.1643.

摘要

采用旋涂工艺与蒸镀工艺结合的方法制备了PBDT-TT-F：PCBM体异质结红光探测器，研究了活性层的混合比例和厚度、退火温度等因素对器件光电特性的影响。实验结果表明：活性层PBDT-TT-F：PCBM的混合质量比为1：1.5、厚度为150 nm、退火温度为100℃、时间为15 min时制备的器件性能最佳，在波长为650 nm、功率为6.6 mW/cm

的光照下，探测器光电流密度可达到0.85 mA/cm

，光响应度达到128 mA/W。

Abstract

PBDT-TT-F:PCBM based heterojunction red photodetectors were fabricated by the experimental method combined with spin coating process and vapor deposition process. The effects of the mixing degree and thickness of the active layer

the annealing temperature and other factors on the photoelectric properties of the device were studied. The experimental results show that the performance of the device is the best with the mixing mass ratio of PBDT-TT-F:PCBM of 1:1.5

the thickness of 150 nm

the annealing temperature of 100℃

and the annealing time of 15 min

respectively. The photocurrent density of the diode is 0.85 mA/cm

and the light response is 128 mA/W.

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Keywords

references

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