Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors

LI Zhi-yue; LYU Ying-bo; ZHAO Ji-feng; SONG Shu-mei; YANG Bo-bo; XIN Yan-qing; WANG Kun-lu

doi:10.3788/fgxb20173812.1622

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Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors

更新时间：2020-08-12

- Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors
- Chinese Journal of Luminescence Vol. 38, Issue 12, Pages: 1622-1628(2017)
- 作者机构：
  
  山东大学空间科学与物理学院,山东威海,264209
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (11504202);Science and T
- DOI：10.3788/fgxb20173812.1622
  CLC： TN321+.5
- Received：21 April 2017，
  
  Revised：12 June 2017，
  
  Published：05 December 2017
- 稿件说明：
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李治玥, 吕英波, 赵继凤等. 氮掺铟锡锌薄膜晶体管的制备及其光电特性[J]. 发光学报, 2017,38(12): 1622-1628

LI Zhi-yue, LYU Ying-bo, ZHAO Ji-feng etc. Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(12): 1622-1628
李治玥, 吕英波, 赵继凤等. 氮掺铟锡锌薄膜晶体管的制备及其光电特性[J]. 发光学报, 2017,38(12): 1622-1628 DOI： 10.3788/fgxb20173812.1622.

LI Zhi-yue, LYU Ying-bo, ZHAO Ji-feng etc. Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(12): 1622-1628 DOI： 10.3788/fgxb20173812.1622.

摘要

以P型

100

硅作为衬底，采用射频磁控溅射技术，在室温下制备了氮掺杂氧化铟锡锌薄膜晶体管（ITZO TFTs），研究了氮气流量对氧化铟锡锌薄膜晶体管结构、光学、电学特性以及稳定性的影响。实验结果表明：在不同氮气流量条件下制备的氧化铟锡锌薄膜均为非晶态，在可见光范围内的平均透过率均在90%左右，光学带隙数值在3.28~3.32 eV之间变化。在氮气流量为4 mL/min时制备的ITZO TFTs，有源层与栅极电介质界面处的界面态密度（

max

）仅为4.310

-2

，场效应迁移率（

）为18.72 cm

/（Vs），开关比（I

on/off

）为10

，亚阈值摆幅（

）为0.39 V/dec，电学性能最优。栅极正偏压应力测试结果表明，该器件具有最强的稳定性。因此，适量的氮掺杂可有效地实现器件氧空位的钝化，降低器件的界面态密度，提高ITZO TFTs的电学性能及稳定性。

Abstract

In-Sn-Zn oxide thin-film transistors were deposited at different nitrogen flow rates on P-Si

100

substrate by RF magnetron sputtering. The influence of nitrogen on the structure

optical and electrical properties and stabilities of ITZO TFTs was studied. The results show that nitrogen has no obvious effect on the structure of ITZO films and all thin films are amorphous. The average transmittance of all ITZO films approach or exceed 90% in the visible region and the optical band gaps are 3.28-3.32 eV. When the nitrogen flow rates increase to 4 mL/min during the sputter deposition

the ITZO TFTs with low interface state density(~4.310

-2

) show excellent electrical properties

the sub-threshold swing is 0.39 V/dec and on/off ratio is 10

operated with the field-effect mobility(

) of 18.72 cm

/(Vs). Moreover

the TFTs show better stability than others in the positive gate bias stress test. Overall

the suitable addition of nitrogen can improve the electrical performance and the stability of the ITZO TFTs by the passivation of oxygen vacancies and the drop of interface state density.

关键词

Keywords

references

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