Two-photon Absorption in AlxGa1-xN Films

ZHANG Wei; WANG Ying-wei; XIAO Si; GU Bing; HE Jun

doi:10.3788/fgxb20173812.1605

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Two-photon Absorption in Al_xGa_1-xN Films

更新时间：2020-08-12

- Two-photon Absorption in Al_xGa_1-xN Films
- Chinese Journal of Luminescence Vol. 38, Issue 12, Pages: 1605-1610(2017)
- 作者机构：
  
  1. 中南大学物理与电子学院超微结构与超快过程湖南省重点实验室,湖南长沙,410083
  2. 东南大学先进光子学中心,江苏南京,210096
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61222406,11174371)
- DOI：10.3788/fgxb20173812.1605
  CLC： O433.1;O472+.3
- Received：16 April 2017，
  
  Revised：05 May 2017，
  
  Published：05 December 2017
- 稿件说明：
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张玮, 王迎威, 肖思等. 铝镓氮薄膜双光子吸收效应[J]. 发光学报, 2017,38(12): 1605-1610

ZHANG Wei, WANG Ying-wei, XIAO Si etc. Two-photon Absorption in AlxGa1-xN Films[J]. Chinese Journal of Luminescence, 2017,38(12): 1605-1610
张玮, 王迎威, 肖思等. 铝镓氮薄膜双光子吸收效应[J]. 发光学报, 2017,38(12): 1605-1610 DOI： 10.3788/fgxb20173812.1605.

ZHANG Wei, WANG Ying-wei, XIAO Si etc. Two-photon Absorption in AlxGa1-xN Films[J]. Chinese Journal of Luminescence, 2017,38(12): 1605-1610 DOI： 10.3788/fgxb20173812.1605.

摘要

基于飞秒激发Z扫描实验技术，研究了氮化镓薄膜和不同铝掺杂含量的掺铝氮化镓（以下简称铝镓氮）薄膜的超快非线性光学响应特性。在开孔Z-scan测试中，纯GaN晶体薄膜表现出典型的双光子吸收特性，双光子吸收系数为3.5 cm/GW，且随着激发光强的增大而逐渐减小。随后测试了不同铝掺杂含量的Al

N薄膜的非线性吸收系数。结果表明，随着铝掺杂摩尔分数的提高（0，19%，32%，42%），非线性吸收系数逐渐减小（18，10，6，5.6 cm/GW）。结合半导体非线性吸收理论分析，Al

N薄膜材料的非线性过程主要是双光子吸收主导非线性响应物理过程。实验结果与半导体双光子吸收过程Sheik-Bahae理论符合得很好。

Abstract

The ultrafast nonlinear absorption response of GaN and Al

N films was studied by employing conventional femto-second Z-scan measurements. In the Z-scan

GaN films exhibit typical two-photon absorption property and with a two-photon absorption coefficient of 3.5 cm/GW. Simultaneously

the two-photon absorption coefficient decreases with the increase of the excitation intensity. GaN films possess excellent nonlinear optical property which is dominated by two-or multi-photon absorption. The Z-scan measurement was further used for Al

N films with different Al element content. It is found that the two-photon absorption coefficient of Al

N films closely dependent on the mole fraction of Al element. The two-photon absorption coefficient decreases from 18 cm/GW to 5.6 cm/GW with the increase of Al mole fraction from 0 to 0.42. Considering the conventional semiconductor nonlinear absorption theory

it is believed that the observed nonlinear absorption originates from the two-photon absorption dominant nonlinear response. The experimental results are in good agreement with the Sheik-Bahae theoretical prediction for two-photon absorption coefficient.

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Keywords

references

TAKAHASHI K, YOSHIKAWA A, SANDHU A. Wide Bandgap Semiconductors[M]. Berlin Heidelberg:Springer, 2007:36-41.

PARKINSON P, DODSON C, JOYCE H J, et al.. Noncontact measurement of charge carrier lifetime andmobility in GaN nanowires[J]. Nano Lett., 2012, 12(9):4600-4604.

LIN H W, LU Y J, CHEN H Y,et al.. InGaN/GaN nanorod array white light-emitting diode[J]. Appl. Phys. Lett., 2010, 97(7):073101.

KAMBACASHI H, IKEDA N, NOMURA T, et al.. High performance normally-off GaN mosfets on sisubstrates[J]. ECS Transactions, 2013, 58(4):155-166.

CHUNG M S, CUTLER P H, MISKOVSKY N M, et al.. Calculations of field emission from AlxGa1-xN as a function of stoichiometry[J]. J. Vac. Sci. Technol. B, 2000, 18(2):919-922.

LI Q, LIU C, LIU Z, et al.. Broadband optical limiting and two-photon absorption properties of colloidal GaAs nanocrystals[J]. Opt. Express, 2005, 13(6):1833-1838.

LEUTHOLD J, KOOS C, FREUDE W. Nonlinear silicon photonics[J]. Nat. Photon., 2010, 4(8):535-544.

LIU X, OSGOOD R M, VLASOV Y A, et al.. Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides[J]. Nat. Photon., 2010, 4(8):557-560.

ZHU Y, ELIM H I, FOO Y L, et al.. Multiwalled carbon nanotubes beaded with ZnO nanoparticles for ultrafast nonlinear optical switching[J]. Adv. Mater., 2006, 18(5):587-592.

MIRAGLIOTTA J, WICKENDEN D, KISTENMACHER T, et al.. Linear-and nonlinear-optical properties of GaN thin films[J]. J. Opt. Soc. Am. B, 1993, 10(8):1447-1456.

SRIVASTAVA P, SINGH S. Linear and second-order optical response of different GaN nanowires[J]. Phys. E, 2008, 40(8):2742-2746.

HUGHES J L, WANG Y, SIPE J. Calculation of linear and second-order optical response inwurtzite GaN and AlN[J]. Phys. Rev. B, 1997, 55(20):13630.

SUN C K, CHU S W, TAI S P, et al.. Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride[J]. Appl. Phys. Lett., 2000, 77(15):2331-2333.

SANFORD N, DAVYDOV A, TSVETKOV D, et al.. Measurement of second order susceptibilities of GaN and AlGaN[J]. J. Appl. Phys., 2005, 97(5):053512-1-13.

SUN C K, LIANG J C, WANG J C, et al.. Two-photon absorption study of GaN[J]. Appl. Phys. Lett., 2000, 76(4):439-441.

PA EBUTAS V, STALNIONIS A, KROTKUS A, et al.. Picosecond Z-scan measurements on bulk GaN crystals[J]. Appl. Phys. Lett., 2001, 78(26):4118-4120.

TODA Y, MATSUBARA T, MORITA R, et al.. Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap[J]. Appl. Phys. Lett., 2003, 82(26):4714-4716.

PA EBUTAS V, KROTKUS A, SUSKI T, et al.. Photoconductive Z-scan measurement of multiphoton absorption in GaN[J]. J. Appl. Phys., 2002, 92(11):6930-6932.

TAHERI B, HAYS J, SONG J, et al.. Picosecond four-wave-mixing in GaN epilayers at 532 nm[J]. Appl. Phys. Lett.,1996, 68(5):587-589.

HUANG Y L, SUN C K, LIANG J C, et al.. Femtosecond Z-scan measurement of GaN[J]. Appl. Phys. Lett., 1999, 75(22):3524-3526.

FAZIO E, PASSASEO A, ALONZO M, et al.. Measurement of pure Kerr nonlinearity in GaN thin films at 800 nm by means of eclipsing Z-scan experiments[J]. J. Opt. A, 2007, 9(2):L3-L4.

KRISHNAMURTHY S, NASHOLD K, SHER A. Two-photon absorption in GaN, GaInN, and GaAlN alloys[J]. Appl. Phys. Lett., 2000, 77(3):355-357.

KAVIANI H, ASGARI A. Investigation of self-focusing effects inwurtzite InGaN/GaN quantum dots[J]. Opt. Int. J. Light Electron Opt., 2013, 124(8):734-739.

GAO Y C, ZHANG X R, LI Y L, et al.. Saturable absorption and reverse saturable absorption in platinum nanoparticles[J]. Opt. Commun., 2005, 251(4-6):429-433.

TAUC J, GRIGOROVICI R, VANCU A. Optical properties and electronic structure of amorphous germanium[J]. Phys. Stat. Sol., 1966, 15(2):627-637.

VURGAFTMAN I, MEYER J R. Band parameters forⅢ-Ⅴ compound semiconductors and their alloys[J]. J. Appl. Phys., 2001, 89(11):5815-5875.

SUTHERLAND R L. Handbook of Nonlinear Optics[M]. 2nd ed. New York:Marcel Dekker, 2003.

VAN STRYLAND E W, VANHERZEELE H, WOODALL M A, et al.. Two photon absorption, nonlinear refraction, and optical limiting in semiconductors[J]. Opt. Eng., 1985, 24(4):244613.

SHEIK-BAHAE M, STRYLAND E W V. Chapter 4-Optical nonlinearities in the transparency region of bulk semiconductors[J]. Semicond. Semimet., 1998, 58:257-318.

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