Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor

WANG Tao; ZHANG Xi-qing

doi:10.3788/fgxb20173811.1539

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Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor

更新时间：2020-08-12

- Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor
- Chinese Journal of Luminescence Vol. 38, Issue 11, Pages: 1539-1544(2017)
- 作者机构：
  
  北京交通大学光电子技术研究所北京,100044
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(51372016,61275022)
- DOI：10.3788/fgxb20173811.1539
  CLC： TN321+.5
- Received：22 March 2017，
  
  Revised：08 May 2017，
  
  Published Online：13 July 2017，
  
  Published：05 November 2017
- 稿件说明：
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王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544

WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544
王韬, 张希清,. 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J]. 发光学报, 2017,38(11): 1539-1544 DOI： 10.3788/fgxb20173811.1539.

WANG Tao, ZHANG Xi-qing,. Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2017,38(11): 1539-1544 DOI： 10.3788/fgxb20173811.1539.

摘要

为了优化镁铟锡氧薄膜晶体管（MITO-TFT）的性能，采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛（O

流量）对器件性能的影响。实验结果表明，O

流量为400 cm

/min、退火温度为750℃的MITO薄膜为非晶态，且其对应薄膜晶体管有最佳性能，其饱和迁移率为12.66 cm

/（Vs），阈值电压为0.8 V，开关比达到10

。适当的退火处理可以有效减少缺陷与界面态密度，并提高器件性能。

Abstract

In order to optimize the performance of Mg-In-Sn-O thin film transistors (MITO-TFTs)

MITO-TFTs were fabricated by radio frequency magnetron sputtering. The electrical properties on the effect of the annealing temperature and annealing ambient (O

flow rate) were investigated. The 750℃ annealed MITO thin film with 400 cm

/min O

flow is amorphous and the corresponding TFT shows best performance with saturation field effect mobility of 12.66 cm

/(Vs)

threshold voltage of 0.8 V and on/off ratio reaches 10

. Proper annealing will reduce defect and interface states density

improve the device performance effectively.

关键词

Keywords

references

OBA F, NISHITANI S R, ISOTANI S, et al.. Energetics of native defects in ZnO[J]. J. Appl. Phys., 2001, 90(2):824-828.

YABUTA H, SANO M, ABE K, et al.. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering[J]. Appl. Phys. Lett., 2006, 89(11):112123.

NOMURA K, KAMIYA T, OHTA H, et al.. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O:experiment and ab initio calculations[J]. Phys. Rev. B, 2007, 75(3):035212.

FORTUNATO E, BARQUINHA P, PIMENTEL A, et al.. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs[J]. Phys. Stat. Sol. (RRL), 2007, 1(1):R34-R36.

HSIEH H H, KAMIYA T, NOMURA K, et al.. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states[J]. Appl. Phys. Lett., 2008, 92(13):133503

ERSLEV P T, CHIANG H Q, HONG D, et al.. Electronic properties of amorphous zinc tin oxide films by junction capacitance methods[J]. J. Non-cryst. Solids, 2008, 354(19):2801-2804.

CHIANG H Q, MCFARLANE B R, HONG D, et al.. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors[J]. J. Non-cryst. Solids, 2008, 354(19):2826-2830.

RYU M K, YANG S, PARK S H K, et al.. High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel:combinatorial approach[J]. Appl. Phys. Lett., 2009, 95(7):072104.

CHEN A H, CAO H T, ZHANG H Z, et al.. Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor[J]. Microelectron. Eng., 2010, 87(10):2019-2023.

吴崎, 许玲, 董承远. 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究[J]. 液晶与显示, 2016, 31(4):375-379. WU Q, XU L, DONG C Y. Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors[J]. Chin. J. Liq. Cryst. Disp., 2016, 31(4):375-379. (in Chinese)

苟昌华, 武明珠, 郭永林, 等. 未退火InGaZnO作为缓冲层的InGaZnO薄膜晶体管性能研究[J]. 液晶与显示, 2015, 30(4):602-607. GOU C H, WU M Z, GUO Y L, et al.. Effects of using InGaZnO without annealing as buffer layer on the performance of InGaZnO thin film transistors[J]. Chin. J. Liq. Cryst. Disp., 2015, 30(4):602-607. (in Chinese)

HAYNES W M. CRC Handbook of Chemistry and Physics[M]. Boca Raton:CRC Press, 2014.

KU C J, REYES P, DUAN Z, et al.. Mg<em>xZn1-xO thin-film transistor-based UV photodetector with enhanced photoresponse[J]. J. Electron. Mater., 2015, 44(10):3471-3476.

KIM G H, JEONG W H, DUAHN B, et al.. Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors[J]. Appl. Phys. Lett., 2010, 96(16):163506.

KU C J, DUAN Z, REYES P I, et al.. Effects of Mg on the electrical characteristics and thermal stability of Mg<em>xZn1-xO thin film transistors[J]. Appl. Phys. Lett., 2011, 98(12):123511.

SU B Y, CHU S Y, JUANG Y D, et al.. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors[J]. J. Alloys Compd., 2013, 580:10-14.

KIM H B, LEE H S. Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors[J]. Thin Solid Films, 2014, 550:504-508.

LI C H, TSAI Y S, CHEN J Z. Negative bias temperature instability of RF-sputtered Mg0. 05Zn0. 95O thin film transistors with MgO gate dielectrics[J]. Semicond. Sci. Technol., 2011, 26(10):105007.

JIANG G, LIU A, LIU G, et al.. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors[J]. Appl. Phys. Lett., 2016, 109(18):183508.

KIM D C, KONG B H, AHN C H, et al.. Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers[J]. Thin Solid Films, 2009, 518(4):1185-1189.

HUANG H Q, LIU F J, SUN J, et al.. Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy[J]. Appl. Surf. Sci., 2011, 257(24):10721-10724.

SONG C W, KIM K H, YANG J W, et al.. Effects of Mg suppressor layer on the inznsno thin-film transistors[J]. J. Semicond. Technol. Sci., 2016, 16(2):198-203.

HOSONO H, YASUKAWA M, KAWAZOE H. Novel oxide amorphous semiconductors:transparent conducting amorphous oxides[J]. J. Non-cryst. Solids, 1996, 203:334-344.

KAMIYA T, NOMURA K, HOSONO H. Origins of high mobility and low operation voltage of amorphous oxide TFTs:electronic structure, electron transport, defects and doping[J]. J. Disp. Technol., 2009, 5(7):273-288.

KAGAN, CHERIE R. Thin-film Transistors[M]. Boca Raton:CRC Press, 2003.

PARK S, BANG S, LEE S, et al.. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor[J]. J. Nanosci. Nanotechnol., 2011, 11(7):6029-6033.

LEE H C, PARK O O. Behaviors of carrier concentrations and mobilities in indium-tin oxide thin films by DC magnetron sputtering at various oxygen flow rates[J]. Vacuum, 2004, 77(1):69-77.

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