Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence

YUAN Chao; GUAN Min; ZHANG Yang; LI Yi-yang; LIU Xing-fang; LIU Shuang-jie; ZENG Yi-ping

doi:10.3788/fgxb20173810.1321

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Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence

更新时间：2020-08-12

- Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence
- Chinese Journal of Luminescence Vol. 38, Issue 10, Pages: 1321-1326(2017)
- 作者机构：
  
  1. 中国科学院半导体研究所材料重点实验室北京,100083
  2. 中国科学院大学材料科学与光电技术学院北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173810.1321
  CLC： TN383+.1
- Received：02 March 2017，
  
  Revised：22 June 2017，
  
  Published Online：29 June 2017，
  
  Published：05 October 2017
- 稿件说明：
移动端阅览
袁超, 关敏, 张杨等. 利用变温瞬态电致发光研究OLED载流子的输运机理[J]. 发光学报, 2017,38(10): 1321-1326

YUAN Chao, GUAN Min, ZHANG Yang etc. Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence[J]. Chinese Journal of Luminescence, 2017,38(10): 1321-1326
袁超, 关敏, 张杨等. 利用变温瞬态电致发光研究OLED载流子的输运机理[J]. 发光学报, 2017,38(10): 1321-1326 DOI： 10.3788/fgxb20173810.1321.

YUAN Chao, GUAN Min, ZHANG Yang etc. Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence[J]. Chinese Journal of Luminescence, 2017,38(10): 1321-1326 DOI： 10.3788/fgxb20173810.1321.

摘要

研究了不同温度下几种结构的有机电致发光器件（OLED）的瞬态电致发光响应特性以及电流密度-电压-亮度特性。研究发现，启亮电压随温度升高而减小的加速度在200 K时出现拐点，且这一数值主要由电子传输层Alq

的迁移率决定。当温度为200 K时，延迟时间

最重要的影响因素是MoO

空穴注入势垒，随着温度的升高，

逐渐减小，到300 K时基本消失。

代表光衰减时间随温度增长的平均速率。MoO

注入层和电致发光材料Ir（ppy）

都会对载流子的堆积起促进作用。由MoO

注入层不同引起的

是0.52 s/K，由电致发光材料Ir（ppy）

不同引起的

是0.73 s/K。

Abstract

The transient electroluminescence response characteristics at different temperatures and the current density-voltage-luminance (

J-V-L

) characteristics of several organic light-emitting devices (OLEDs) were studied. It is found that the acceleration of the turn-on voltage decreasing with the increase of temperature appears the inflection point at 200 K

and this value mainly depends on the mobility of the electron transport layer Alq

. When the temperature is 200 K

the most important factors of delay time

is hole injection barrier MoO

. The

decreases with the increase of temperature and gradually disappears at 300 K.

represents the average rate of the fall time increasing with the temperature. Both MoO

and Ir(ppy)

can promote the accumulation of carriers.

caused by MoO

injection layer is 0.52 s/K

and that caused by the electroluminescent material Ir(ppy)

is 0.73 s/K.

关键词

Keywords

references

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