Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity

LI Jing; CAO Yin-hua; LIU You-qiang; XU Shang-rui; QIN Wen-bin; QIU Yun-tao; YAO Lei; ZENG Xiao-di; WANG Zhi-yong

doi:10.3788/fgxb20173810.1302

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Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity

更新时间：2020-08-12

- Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity
- Chinese Journal of Luminescence Vol. 38, Issue 10, Pages: 1302-1306(2017)
- 作者机构：
  
  北京工业大学激光工程研究院北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173810.1302
  CLC： TN31
- Received：07 March 2017，
  
  Revised：24 April 2017，
  
  Published Online：29 June 2017，
  
  Published：05 October 2017
- 稿件说明：
移动端阅览
李景, 曹银花, 刘友强等. 基于外腔反馈二极管线阵列的smile效应测量方法[J]. 发光学报, 2017,38(10): 1302-1306

LI Jing, CAO Yin-hua, LIU You-qiang etc. Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity[J]. Chinese Journal of Luminescence, 2017,38(10): 1302-1306
李景, 曹银花, 刘友强等. 基于外腔反馈二极管线阵列的smile效应测量方法[J]. 发光学报, 2017,38(10): 1302-1306 DOI： 10.3788/fgxb20173810.1302.

LI Jing, CAO Yin-hua, LIU You-qiang etc. Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity[J]. Chinese Journal of Luminescence, 2017,38(10): 1302-1306 DOI： 10.3788/fgxb20173810.1302.

摘要

采用外建激光谐振腔，在低于原芯片阈值的电流激励下对LDA的每个发光点进行单独测量，从而分析整个半导体激光阵列（LDA）的smile效应。实验中利用镀膜反射率大于半导体前腔面的外腔镜形成外腔半导体激光器。在外腔中插入曲面平行于p-n结的柱面镜，使只在光轴上的发光点与外腔镜形成外腔激光器，降低该发光点的激光阈值，从而使其在正常的阈值以下的电流激励下输出激光，在平行于p-n结的方向移动柱面镜，可以逐个对半导体激光器中的发光点进行选择测量，从而获得LDA smile效应的测量值。测量中的低电流激励产生的热量对芯片寿命没有影响，对LDA的发光点的单个测量也避免了其他发光点对CCD的影响。

Abstract

The smile effect was measured in the process of semiconductor laser packaging using the external cavity mirror of which the reflectance was greater than the front cavity surface of the semiconductor to form external cavity semiconductor laser. In measurement

the cylindrical lens was inserted in the external cavity. The external laser cavity was only formed between the outer mirror and the single light emitting point in the cylindrical lens light axis. The laser threshold of the light emitting point was reduced to output laser under the excitation current less than the normal threshold value. The light emitting point of the diode laser was selected one by one by moving the cylinder lens

so the smile effect was measured by summarizing all beam position. The low current is no harmful effects on the diode laser bar

and the influence of the other emitters on CCD is avoided by measuring single emitter.

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Keywords

references

王祥鹏, 李再金, 刘云, 等. 半导体激光器列阵的smile效应与封装技术[J]. 光学精密工程, 2010,18(3):552-557. WANG X P, LI Z J, LIU Y, et al.. Smile effect and package technique for diode laser arrays[J]. Opt. Precision Eng., 2010, 18(3):552-557. (in Chinese)

WETTER N U. Three-fold effective brightness increase of laser diode bar emission by assessment and correction of diode array curvature[J]. Opt. Laser Technol., 2011, 33:181-187.

潘飞, 尧舜, 贾冠男, 等. 半导体激光阵列"Smile"效应下快轴准直镜的装调[J]. 半导体光电, 2014, 35(1):35-38. PAN F, YAO S, JIA G N, et al.. "Smile" effect on fast axis collimator assembly for diode laser array[J]. Semicond. Optoelectron., 2014, 35(1):35-38. (in Chinese)

郎超, 尧舜, 陈丙振, 等. 半导体激光器阵列的"Smile"效应对光束质量的影响[J]. 中国激光, 2012, 39(5):33-37. LANG C, YAO S, CHEN B Z, et al.. "Smile" effect on the beam quality for diode laser arrays[J]. Chin. J. Laser, 2012, 39(5):33-37. (in Chinese)

SU Z P, LOU Q H, DONG J X, et al.. Beam quality improvement of laser diode array by using off-axis external cavity[J]. Opt. Express, 2007, 15(19):11776-11780.

王淑娜, 张普, 熊玲玲, 等. 温度对高功率半导体激光器阵列"smile"的影响[J]. 光子学报, 2016, 45(5):0514001. WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on "smile" in high power diode laser bars[J]. Acta Photon. Sinica, 2016, 45(5):0514001. (in Chinese)

HERZOG W D, UNLU M S, GODLAERG B B, et al.. Beam divergence and waist measurements of laser diodes by near-field scanning optical microscopy[J]. Appl. Phys. Lett., 1997, 70(6):688-690.

MART L, RAMOS J A, MART R A. Interferometric method for characterizing the smile of laser diode bars[J]. Opt. Commun., 2007, 275:359-371.

贾冠男, 尧舜, 潘飞, 等. 探针扫描法快速测量半导体激光阵列Smile效应[J]. 红外与激光工程, 2015, 44(12):3576-3579. JIA G N, YAO S, PAN F, et al.. Smile effect of laser diode arrays measured by stylus scan method[J]. Infrared Laser Eng., 2015, 44(12):3576-3579. (in Chinese)

OLSSON A, TANG C. Coherent optical interference effects in external-cavity semiconductor lasers[J]. IEEE J. Quant. Elect., 1981, 17(8):1320-1323.

TIMMERMANN A, MEINSCHIEN J, BRUNS P, et al.. Next generation high-brightness diode lasers offer new industrial applications[J]. SPIE, 2008, 6876:1-12.

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Related Institution

中国科学院大学

中国科学院长春光学精密机械与物理研究所

University of Chinese Academy of Sciences, Beijing 100049, China

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences

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