Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors

YUE Zhi-fu; WU Yong; LI Xi-feng; YANG Xiang; JIANG Shu; XU Yun-long

doi:10.3788/fgxb20173809.1205

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Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors

更新时间：2020-08-12

- Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors
- Chinese Journal of Luminescence Vol. 38, Issue 9, Pages: 1205-1209(2017)
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
  3. 上海天马微电子有限公司上海,201201
- 作者简介：
- 基金信息：
  
  Supported by National High Technology Research and Development Program(863)(2015AA03
- DOI：10.3788/fgxb20173809.1205
  CLC： TN321
- Received：24 January 2017，
  
  Revised：19 March 2017，
  
  Published Online：26 May 2017，
  
  Published：05 September 2017
- 稿件说明：
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岳致富, 吴勇, 李喜峰等. 柔性低温多晶硅薄膜晶体管的弯曲稳定性[J]. 发光学报, 2017,38(9): 1205-1209

YUE Zhi-fu, WU Yong, LI Xi-feng etc. Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(9): 1205-1209
岳致富, 吴勇, 李喜峰等. 柔性低温多晶硅薄膜晶体管的弯曲稳定性[J]. 发光学报, 2017,38(9): 1205-1209 DOI： 10.3788/fgxb20173809.1205.

YUE Zhi-fu, WU Yong, LI Xi-feng etc. Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors[J]. Chinese Journal of Luminescence, 2017,38(9): 1205-1209 DOI： 10.3788/fgxb20173809.1205.

摘要

研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时，在拉伸弯曲状态下，阈值电压和平坦时保持一致（

=-1.34 V），迁移率

sat

从45.65 cm

/（Vs）降到45.17 cm

/（Vs），开关比增大；在压缩弯曲状态下，转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时，进行了正负偏压稳定性测试，结果表明，器件依然具有很好的稳定性。

Abstract

The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3 mm. For the stretch bending

the threshold voltage kept the same with the flat(

=-1.34 V)

the mobility reduced from 45.65 cm

/(Vs) to 45.17 cm

/(Vs)

and I

off

increased. For the compress bending

the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm

the device was tested under the positive and negative bias stress

and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.

关键词

Keywords

references

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