Raman Spectra and Crystal Structure of Ⅳ Materials

YANG Xue-xian; NING Yang-hua; WANG Xiao-yun; ZHAO He-ping

doi:10.3788/fgxb20173809.1192

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Raman Spectra and Crystal Structure of Ⅳ Materials

更新时间：2020-08-12

- Raman Spectra and Crystal Structure of Ⅳ Materials
- Chinese Journal of Luminescence Vol. 38, Issue 9, Pages: 1192-1197(2017)
- 作者机构：
  
  吉首大学物理与机电工程学院材料制备实验室, 湖南吉首,416000
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11602094, 11564013, 115640
- DOI：10.3788/fgxb20173809.1192
  CLC： O641
- Received：22 January 2017，
  
  Revised：11 March 2017，
  
  Published Online：06 June 2017，
  
  Published：05 September 2017
- 稿件说明：
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杨学弦, 宁杨华, 王小云等. 小尺寸Ⅳ族材料拉曼谱与晶体结构的研究[J]. 发光学报, 2017,38(9): 1192-1197

YANG Xue-xian, NING Yang-hua, WANG Xiao-yun etc. Raman Spectra and Crystal Structure of Ⅳ Materials[J]. Chinese Journal of Luminescence, 2017,38(9): 1192-1197
杨学弦, 宁杨华, 王小云等. 小尺寸Ⅳ族材料拉曼谱与晶体结构的研究[J]. 发光学报, 2017,38(9): 1192-1197 DOI： 10.3788/fgxb20173809.1192.

YANG Xue-xian, NING Yang-hua, WANG Xiao-yun etc. Raman Spectra and Crystal Structure of Ⅳ Materials[J]. Chinese Journal of Luminescence, 2017,38(9): 1192-1197 DOI： 10.3788/fgxb20173809.1192.

摘要

以键弛豫理论和核壳模型为基础，建立尺寸-键参数-拉曼谱三者统一的函数关系式，得到了不同尺寸下的 Ⅳ 族材料键长、键能和配位数。阐明了小尺寸下的Ⅳ族材料拉曼谱发生红移是由于有效配位数缺失引起的。通过这一理论方法可以得到拉曼谱中含有的物理信息，极大地扩展拉曼散射技术的应用范围。

Abstract

The correlation function of the size-bond parameter-Raman shift was formulated based on the bond order-length-strength (BOLS) correlation and core-shell model. The quantitative information of the bond length

bond energy and the effective atomic coordination number (CN) of the Ⅳ materials was obtained. It is clarified that the size-induced phonon softening arises intrinsically from the undercoordinated atoms. Developed approach empowers the Raman technique in deriving quantitative.

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references

DIGUEZ A, ROMANO-RODRGUEZ A, VIL A, et al.. The complete Raman spectrum of nanometric SnO2 particles[J]. J. Appl. Phys., 2001, 90(3):1550-1557.

COSENTINO S, BARBAGIOVANNI E G, CRUPI I, et al.. Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices[J]. Solar Energy Mater. Solar Cells, 2015, 135:22-28.

CHENG W, REN S F. Calculations on the size effects of Raman intensities of silicon quantum dots[J]. Phys. Rev. B, 2002, 65(20):205305.

XIE C Y, ZHANG L D, MO C M. Characterization of Raman spectra in nano-SnO2 solids[J]. Phys. Stat. Sol., 1994, 141(1):K59-K61.

YUZYUK Y I, KATIYAR R S, ALYOSHIN V A, et al.. Stress relaxation in heteroepitaxial (Ba, Sr)TiO3/(001) MgO thin film studied by micro-Raman spectroscopy[J]. Phys. Rev. B, 2003, 68(10):104104.

DOBAL P S, BHASKAR S, MAJUMDER S B, et al.. Micro-Raman investigation of stress variations in lead titanate films on sapphire[J]. J. Appl. Phys., 1999, 86(2):828-834.

IQBAL Z, VEPREK S. Raman scattering from hydrogenated microcrystalline and amorphous silicon[J]. J. Phys. C:Solid State Phys., 1982, 15(2):377-392.

RICHTER H, WANG Z P, LEY L. The one phonon Raman spectrum in microcrystalline silicon[J]. Solid State Commun., 1981, 39(5):625-629.

CAMPBELL I H, FAUCHET P M. The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors[J]. Solid State Commun., 1986, 58(10):739-741.

SUN C Q. Size dependence of nanostructures:impact of bond order deficiency[J]. Prog. Solid State Chem., 2007, 35(1):1-159.

YANG X X, ZHOU Z F, WANG Y, et al.. Raman spectroscopy determination of the Debye temperature and atomic cohesive energy of CdS, CdSe, Bi2Se3, and Sb2Te3 nanostructures[J]. J. Appl. Phys., 2012, 112(8):083508-1-6.

YANG X X, ZHOU Z F, WANG Y, et al.. Raman spectroscopic determination of the length, energy, Debye temperature, and compressibility of the C-C bond in carbon allotropes[J]. Chem. Phys. Lett., 2013, 575:86-90.

SUN Z, SHI J R, TAY B K, et al.. UV Raman characteristics of nanocrystalline diamond films with different grain size[J]. Diam. Relat. Mater., 2000, 9(12):1979-1983.

YOSHIKAWA M, MORI Y, MAEGAWA M, et al.. Raman scattering from diamond particles[J]. Appl. Phys. Lett., 1993, 62(24):3114-3116.

OSSADNIK C, VEP?EK S, GREGORA I. Applicability of Raman scattering for the characterization of nanocrystalline silicon[J]. Thin Solid Films, 1999, 337(1-2):148-151.

BOTTANI C E, MANTINI C, MILANI P, et al.. Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots[J]. Appl. Phys. Lett., 1996, 69(16):2409-2411.

FUJⅡ M, HAYASHI S, YAMAMOTO K. Raman scattering from quantum dots of Ge embedded in SiO2 thin films[J]. Appl. Phys. Lett., 1990, 57(25):2692-2694.

SUN C Q, PAN L K, LI C M, et al.. Size-induced acoustic hardening and optic softening of phonons in InP, CeO2, SnO2, CdS, Ag, and Si nanostructures[J]. Phys. Rev. B, 2005, 72(13):134301-1-7.

BOPPART H, VAN STRAATEN J, SILVERA I F. Raman spectra of diamond at high pressures[J]. Phys. Rev. B, 1985, 32(2):1423-1425.

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