Photoluminescence of Nanocrystalline-Ge/SiNx Multilayers

LI Cong; XU Yan-xin; HE Hong-ping

doi:10.3788/fgxb20173809.1173

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Photoluminescence of Nanocrystalline-Ge/SiN_x Multilayers

更新时间：2020-08-12

- Photoluminescence of Nanocrystalline-Ge/SiN_x Multilayers
- Chinese Journal of Luminescence Vol. 38, Issue 9, Pages: 1173-1178(2017)
- 作者机构：
  
  1. 中国电子科技集团公司第三十八研究所,安徽合肥,230088
  2. 固体微结构国家重点实验室,江苏南京,230091
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173809.1173
  CLC： O433;O472+.3
- Received：22 February 2017，
  
  Revised：21 April 2017，
  
  Published Online：22 June 2017，
  
  Published：05 September 2017
- 稿件说明：
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李悰, 许彦鑫, 何宏平. nc-Ge/SiNx多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178

LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiNx Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178
李悰, 许彦鑫, 何宏平. nc-Ge/SiNx多层膜的光致发光特性[J]. 发光学报, 2017,38(9): 1173-1178 DOI： 10.3788/fgxb20173809.1173.

LI Cong, XU Yan-xin, HE Hong-ping. Photoluminescence of Nanocrystalline-Ge/SiNx Multilayers[J]. Chinese Journal of Luminescence, 2017,38(9): 1173-1178 DOI： 10.3788/fgxb20173809.1173.

摘要

通过将a-Ge：H/a-SiN

多层膜进行氧化，制备了nc-Ge/SiN

多层膜。观察到了室温下的强烈可见光发射，发光波长为500 nm。通过分析，排除了与量子限制效应有关的光发射机制，也排除了与Si和N相关的缺陷产生的复合机制，认为该发光源于氧化后的a-SiN

介质层中带尾态之间的辐射复合，最有效的激发能量约为介质层的带隙。

Abstract

Nanocrystalline-Ge (nc-Ge)/amorphous-SiN

(a-SiN

) multilayers (MLs) were fabricated by oxidizing hydrogenated amorphous-Ge(a-Ge:H)/a-SiN

multilayers. Its strong photoluminescence (PL)

peak at 500 nm

was observed at room temperature. Then

the mechanism of PL was studied

which indicated that the light emission was irrelevant to quantum confinement effect. The recombination of defects related to Si or N was also excluded. It is believed the PL of nc-Ge/SiN

MLs is originated from the radiative recombination of tail states of oxidized a-SiN

matrix

and the most effective excitation energy is close to the optical band gap of matrix.

关键词

Keywords

references

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