Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq3

YUAN Tao-li; WANG Xiu-feng; MU Qiang; ZHANG Fang-hui; LI Ting-ting

doi:10.3788/fgxb20173808.1069

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Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq₃

更新时间：2020-08-12

- Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq₃
- Chinese Journal of Luminescence Vol. 38, Issue 8, Pages: 1069-1075(2017)
- 作者机构：
  
  1. 陕西科技大学电气与信息工程学院,陕西西安,710021
  2. 陕西科技大学材料科学与工程学院,陕西西安,710021
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173808.1069
  CLC： TN383+.1
- Received：16 April 2017，
  
  Revised：18 May 2017，
  
  Published：05 August 2017
- 稿件说明：
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袁桃利, 王秀峰, 牟强等. 基于Alq3掺杂Bphen电子传输层的有机发光二极管[J]. 发光学报, 2017,38(8): 1069-1075

YUAN Tao-li, WANG Xiu-feng, MU Qiang etc. Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq3[J]. Chinese Journal of Luminescence, 2017,38(8): 1069-1075
袁桃利, 王秀峰, 牟强等. 基于Alq3掺杂Bphen电子传输层的有机发光二极管[J]. 发光学报, 2017,38(8): 1069-1075 DOI： 10.3788/fgxb20173808.1069.

YUAN Tao-li, WANG Xiu-feng, MU Qiang etc. Organic Light Emitting Diode Based on Bphen Electron Transport Layer Doped with Alq3[J]. Chinese Journal of Luminescence, 2017,38(8): 1069-1075 DOI： 10.3788/fgxb20173808.1069.

摘要

制备了结构为ITO/MoO

（30 nm）/NPB（40 nm）/TCTA（10 nm）/CBP：R-4B（8%）（30 nm）/电子传输层（40 nm）/LiF（1 nm）/Al（150 nm）的器件，其中R-4B为红色磷光染料，电子传输层分别采用Alq

、Bphen：Alq

（

%）和Bphen，对3种不同电子传输层器件的发光性能进行了研究。结果表明：Bphen：Alq

（

%）作为电子传输层的器件与Alq

或Bphen作为电子传输层的器件相比，亮度提高了约3.5倍，电流效率提高了1.1~2.5倍，效率滚降变得平缓。采用Bphen：Alq

作为电子传输层，不仅减小了电子在LUMO能级传输时的跳跃传输距离，而且在一定程度上抑制了Bphen的结晶，使器件的电子传输能力和效率滚降性能得到改善。

Abstract

Red phosphorescent organic light emitting diodes were fabricated using R-4B phosphorescent dye. The device structure was ITO/MoO

(30 nm)/NPB(40 nm)/TCTA (10 nm)/CBP:R-4B(8%) (30 nm)/electron transport layer (40 nm)/LiF(1 nm)/Al(150 nm). The electron transport layers were Alq

Bphen:Alq

(

%) and Bphen

respectively. The electroluminescent properties were studied by using different electron transport layers. The results show that the brightness and the current efficiency of the device using Bphen:Alq

(

%) as electron transport layer is 3.5 times and 1.1-2.5 times respectively stronger than that of using Alq

or Bphen as electron transport layer. Meanwhile

the efficiency roll-off of device became smooth. Using Bphen:Alq

as electron transport layer can not only reduce the hopping distance when electrons transmit between LUMO levels

but also restrain the crystallization of Bphen

and as a result

the electron conductivity and efficiency roll-off of the device are improved.

关键词

Keywords

references

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