Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping

HUO Da-yun; SHI Zhen-wu; XU Chao; DENG Chang-wei; CHEN Chen; CHEN Lin-sen; WANG Wen-xin; PE

doi:10.3788/fgxb20173808.1056

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Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping

更新时间：2020-08-12

- Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
- Chinese Journal of Luminescence Vol. 38, Issue 8, Pages: 1056-1062(2017)
- 作者机构：
  
  1. 苏州大学光电信息科学与工程学院, 苏州纳米科技协同创新中心,江苏苏州,215006
  2. 苏州大学江苏省先进光学技术重点实验室, 教育部现代光学技术重点实验室,江苏苏州,215006
  3. 中国科学院物理研究所北京凝聚态物理国家实验室北京,100190
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (91323303, 11504251);Pri
- DOI：10.3788/fgxb20173808.1056
  CLC： O484.4
- Received：19 January 2017，
  
  Revised：13 March 2017，
  
  Published：05 August 2017
- 稿件说明：
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霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062

HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062
霍大云, 石震武, 徐超等. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017,38(8): 1056-1062 DOI： 10.3788/fgxb20173808.1056.

HUO Da-yun, SHI Zhen-wu, XU Chao etc. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017,38(8): 1056-1062 DOI： 10.3788/fgxb20173808.1056.

摘要

InGaAsN/GaAs量子阱中进行铍（Be）元素重掺杂能显著提高其光学性质，并且发光波长发生了红移。X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN（Be）/GaAs量子阱在退火过程中的应力释放。对比退火前，退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言，这样的偏移要小很多。

Abstract

Heavily doping beryllium in the InGaAsN/GaAs QW during thermal annealing. An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed

while the shift for the Be-doped QW was much smaller than undoped QW.

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references

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